In the last ten years, the physics and technology of low dimensional structures has experienced a tremendous development. Quantum structures with vertical and lateral confinements are now routinely fabricated with feature sizes below 100 run. While quantization of the electron states in mesoscopic systems has been the subject of intense investigation, the effect of confinement on lattice vibrations and its influence on the electron-phonon interaction and energy dissipation in nanostructures received atten tion only recently. This NATO Advanced Research Workshop on Phonons in Sem iconductor Nanostructures was a forum for discussion on the latest developments in the physics of phonons and their impact on the electronic properties of low-dimensional structures. Our goal was to bring together specialists in lattice dynamics and nanos tructure physics to assess the increasing importance of phonon effects on the physical properties of one-(lD) and zero-dimensional (OD) structures. The Workshop addressed various issues related to phonon physics in III-V, II-VI and IV semiconductor nanostructures. The following topics were successively covered: Models for confined phonons in semiconductor nanostructures, latest experimental observations of confined phonons and electron-phonon interaction in two-dimensional systems, elementary excitations in nanostructures, phonons and optical processes in reduced dimensionality systems, phonon limited transport phenomena, hot electron effects in quasi - ID structures, carrier relaxation and phonon bottleneck in quantum dots.

This book focuses on the theory of phonon interactions in nanoscale structures with particular emphasis on modern electronic and optoelectronic devices. The continuing progress in the fabrication of semiconductor nanostructures with lower dimensional features has led to devices with enhanced functionality and even novel devices with new operating principles. The critical role of phonon effects in such semiconductor devices is well known. There is therefore a great need for a greater awareness and understanding of confined phonon effects. A key goal of this book is to describe tractable models of confined phonons and how these are applied to calculations of basic properties and phenomena of semiconductor heterostructures. The level of presentation is appropriate for undergraduate and graduate students in physics and engineering with some background in quantum mechanics and solid state physics or devices. A basic understanding of electromagnetism and classical acoustics is assumed.

The book provides a technical account of the basic physics of nanostructures, which are the foundation of the hardware found in all manner of computers. It will be of interest to semiconductor physicists and electronic engineers and advanced research students. Crystalline nanostructures have special properties associated with electrons and lattice vibrations and their interaction. The result of spatial confinement of electrons is indicated in the nomenclature of nanostructures: quantum wells, quantum wires, quantum dots. Confinement also has a profound effect on lattice vibrations. The documentation of the confinement of acoustic modes goes back to Lord Rayleigh's work in the late nineteenth century, but no such documentation exists for optical modes. It is only comparatively recently that any theory of the elastic properties of optical modes exists, and a comprehensive account is given in this book. A model of the lattice dynamics of the diamond lattice is given that reveals the quantitative distinction between acoustic and optical modes and the difference of connection rules that must apply at an interface. The presence of interfaces in nanostructures forces the hybridization of longitudinally and transversely polarized modes, along with, in polar material, electromagnetic modes. Hybrid acoustic and optical modes are described, with an emphasis on polar-optical phonons and their interaction with electrons. Scattering rates in single heterostructures, quantum wells and quantum wires are described and the anharmonic interaction in quantum dots discussed. A description is given of the effects of dynamic screening of hybrid polar modes and the production of hot phonons.

During this research effort, numerous interactions of confined phonons in nanostructures have been modelled theoretically; these include: piezoelectric scattering in cylindrical quantum wires; generalized piezoelectric scattering rate for elections in a two-dimensional election gas; Gamma-X transitions driven by interface phonons; interface optical modes in cylindrical quantum wires; microscopic model for election-optical-phonon interactions in quantum wells; optical phonons in quantum dots; electron-acoustic-phonon scattering in both rectangular and cylindrical quantum wires; and acoustic modes in quantum wires and dots.

The advent of the femto-second laser has enabled us to observe phenomena at the atomic timescale. One area to reap enormous benefits from this ability is ultrafast dynamics. Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics. In eight authoritative chapters illustrated by more than 150 figures, this book spans a broad range of new techniques and advances. It begins with a review of spin dynamics in a high-mobility two-dimensional electron gas, followed by the generation, propagation, and nonlinear properties of high-amplitude, ultrashort strain solitons in solids. The discussion then turns to nonlinear optical properties of nanoscale artificial dielectrics, optical properties of GaN self-assembled quantum dots, and optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based semiconductors. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum wells. With its pedagogical approach and practical, up-to-date coverage, Non-Equilibrium Dynamics of Semiconductors and Nanostructures allows you to easily put the material into practice, whether you are a seasoned researcher or new to the field.

Nonequilibrium hot charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book, one of the first on the topic, discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices. The work will provide scientists and device engineers with an authoritative review of the most exciting recent developments in this rapidly moving field. It should be read by all those who wish to learn the fundamentals of contemporary ultra-small, ultra-fast semiconductor devices. Topics covered include Reduced dimensionality and quantum wells Carrier-phonon interactions and hot phonons Femtosecond optical studies of hot carrier Ballistic transport Submicron and resonant tunneling devices