The field of low-dimensional structures has been experiencing rapid development in both theoretical and experimental research. Phonons in Low Dimensional Structures is a collection of chapters related to the properties of solid-state structures dependent on lattice vibrations. The book is divided into two parts. In the first part, research topics such as interface phonons and polaron states, carrier-phonon non-equilibrium dynamics, directional projection of elastic waves in parallel array of N elastically coupled waveguides, collective dynamics for longitudinal and transverse phonon modes, and elastic properties for bulk metallic glasses are related to semiconductor devices and metallic glasses devices. The second part of the book contains, among others, topics related to superconductor, phononic crystal carbon nanotube devices such as phonon dispersion calculations using density functional theory for a range of superconducting materials, phononic crystal-based MEMS resonators, absorption of acoustic phonons in the hyper-sound regime in fluorine-modified carbon nanotubes and single-walled nanotubes, phonon transport in carbon nanotubes, quantization of phonon thermal conductance, and phonon Anderson localization.

This book focuses on the theory of phonon interactions in nanoscale structures with particular emphasis on modern electronic and optoelectronic devices. The continuing progress in the fabrication of semiconductor nanostructures with lower dimensional features has led to devices with enhanced functionality and even novel devices with new operating principles. The critical role of phonon effects in such semiconductor devices is well known. There is therefore a great need for a greater awareness and understanding of confined phonon effects. A key goal of this book is to describe tractable models of confined phonons and how these are applied to calculations of basic properties and phenomena of semiconductor heterostructures. The level of presentation is appropriate for undergraduate and graduate students in physics and engineering with some background in quantum mechanics and solid state physics or devices. A basic understanding of electromagnetism and classical acoustics is assumed.

Low-Dimensional Semiconductor Structures offers a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It covers their fabrication; electronic, optical, and transport properties; role in exploring new physical phenomena; and utilization in devices. The authors describe the epitaxial growth of semiconductors and the physical behavior of electrons and phonons in low-dimensional structures. They then go on to discuss nonlinear optics in quantum heterostructures. The final chapters deal with semiconductor lasers, mesoscopic devices, and high-speed heterostructure devices. The book contains many exercises and comprehensive references.

This volume is devoted to the electron and phonon energy states of inorganic layered crystals. The distinctive feature of these low-dimensional materials is their easy mechanical cleavage along planes parallel to the layers. This feature implies that the chemical binding within each layer is much stronger than the binding between layers and that some, but not necessarily all, physical properties of layered crystals have two-dimensional character. In Wyckoff's Crystal Structures, SiC and related com pounds are regarded as layered structures, because their atomic layers are alternately stacked according to the requirements of cubic and hexagonal close-packing. How ever, the uniform (tetrahedral) coordination of the atoms in these compounds excludes the kind of structural anisotropy that is fundamental to the materials dis cussed in this volume. An individual layer of a layered crystal may be composed of either a single sheet of atoms, as in graphite, or a set of up to five atomic sheets, as in Bi2 Te3' A layer may also have more complicated arrangements of the atoms, as we find for example in Sb S . But the unique feature common to all these materials is 2 3 the structural anisotropy, which directly affects their electronic and vibrational properties. The nature of the weak interlayer coupling is not very well understood, despite the frequent attribution of the coupling in the literature to van der Waals forces. Two main facts, however, have emerged from all studies.

In the last ten years, the physics and technology of low dimensional structures has experienced a tremendous development. Quantum structures with vertical and lateral confinements are now routinely fabricated with feature sizes below 100 run. While quantization of the electron states in mesoscopic systems has been the subject of intense investigation, the effect of confinement on lattice vibrations and its influence on the electron-phonon interaction and energy dissipation in nanostructures received atten tion only recently. This NATO Advanced Research Workshop on Phonons in Sem iconductor Nanostructures was a forum for discussion on the latest developments in the physics of phonons and their impact on the electronic properties of low-dimensional structures. Our goal was to bring together specialists in lattice dynamics and nanos tructure physics to assess the increasing importance of phonon effects on the physical properties of one-(lD) and zero-dimensional (OD) structures. The Workshop addressed various issues related to phonon physics in III-V, II-VI and IV semiconductor nanostructures. The following topics were successively covered: Models for confined phonons in semiconductor nanostructures, latest experimental observations of confined phonons and electron-phonon interaction in two-dimensional systems, elementary excitations in nanostructures, phonons and optical processes in reduced dimensionality systems, phonon limited transport phenomena, hot electron effects in quasi - ID structures, carrier relaxation and phonon bottleneck in quantum dots.

This Briefs volume describes the properties and structure of elementary excitations in isotope low-dimensional structures. Without assuming prior knowledge of quantum physics, the present book provides the basic knowledge needed to understand the recent developments in the sub-disciplines of nanoscience isotopetronics, novel device concepts and materials for nanotechnology. It is the first and comprehensive interdisciplinary account of the newly developed scientific discipline isotopetronics.

The study of electrons and holes confined to two, one and even zero dimensions has uncovered a rich variety of new physics and applications. This book describes the interaction between these confined carriers and the optic and acoustic phonons within and around the confined regions. Phonons provide the principal channel of energy transfer between the carriers and their surroundings and also the main restriction to their room temperature mobility. But they have many other roles; they provide, for example, an essential feature of the operation of the quantum cascade laser. Since their momenta at relevant energies are well matched to those of electrons, they can also be used to probe electronic properties such as the confinement width of 2D electron gases and the dispersion curve of quasiparticles in the fractional quantum Hall effect. The book describes both the physics of the electron-phonon interaction in the different confined systems and the experimental and theoretical techniques that have been used in its investigation. The experimental methods include optical and transport techniques as well as techniques in which phonons are used as the experimental probe. The aim of the book is to provide an up to date review of the physics and its significance in device performance. It is also written to be explanatory and accessible to graduate students and others new to the field.