The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. The book, first published in 2000, includes detailed theoretical studies of the nature of SiO2 and its interface with silicon, electron paramagnetic resonance for the study of defects, electron tunneling, and band alignment among others.

Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

The second Edition of the Handbook of Silicon Wafer Cleaning Technology is intended to provide knowledge of wet, plasma, and other surface conditioning techniques used to manufacture integrated circuits. The integration of the clean processes into the device manufacturing flow will be presented with respect to other manufacturing steps such as thermal, implant, etching, and photolithography processes. The Handbook discusses both wet and plasma-based cleaning technologies that are used for removing contamination, particles, residue, and photoresist from wafer surfaces. Both the process and the equipment are covered. A review of the current cleaning technologies is included. Also, advanced cleaning technologies that are under investigation for next generation processing are covered; including supercritical fluid, laser, and cryoaerosol cleaning techniques. Additionally theoretical aspects of the cleaning technologies and how these processes affect the wafer is discussed such as device damage and surface roughening will be discussed. The analysis of the wafers surface is outlined. A discussion of the new materials and the changes required for the surface conditioning process used for manufacturing is also included. - Focused on silicon wafer cleaning techniques including wet, plasma, and other surface conditioning techniques used to manufacture integrated circuits - As this book covers the major technologies for removing contaminants, it is a reliable reference for anyone that manufactures integrated circuits, or supplies the semiconductor and microelectronics industries - Covers processes and equipment, as well as new materials and changes required for the surface conditioning process - Editors are two of the top names in the field and are both extensively published - Discusses next generation processing techniques including supercritical fluid, laser, and cryoaerosol

This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.