With further optimization of the reaction process of the absorber layer as well as the other layers higher efficiencies can be achieved. The effect of sodium on the device performance is experimentally verified in this work. To the best of our knowledge the detrimental effect of excess sodium has been verified by experimental data and effort has been made to correlate the variation in PV parameter to theoretical models of effect of sodium. It has been a regular practice to deposit thin barrier layer prior to molybdenum deposition to reduce the micrononuniformities caused due to nonuniform out diffusion of sodium from the soda lime glass. However, it was proven in this work that an optimally thick barrier layer is necessary to reduce the out diffusion of sodium to negligible quantities and thus reduce the micrononuniformities. Molybdenum back contact deposition is a bottleneck in high volume manufacturing due to the current state of art where multi layer molybdenum film needs to be deposited to achieve the required properties. In order to understand and solve this problem experiments were carried out. The effect of working distance (distance between the target and the substrate) on film properties was studied and is presented in this work. During the course of this work efforts were taken to carry out a systematic and detailed study of some of the fundamental issues related to CIGS technology and particular for high volume manufacturing of CIGS PV modules and lay a good foundation for further improvement of PV performance of CIGS thin film solar cells prepared by the two step process of selenization and sulfurization of sputtered metallic precursors.

Thin film solar cells have the potential to be an important contributor to the world energy demand in the 21st century. Among all the thin film technologies, CuInGaSe2 (CIGS) thin film solar cells have achieved the highest efficiency. However, the high price of photovoltaic (PV) modules has been a major factor impeding their growth for terrestrial applications. Reduction in cost of PV modules can be realized by several ways including choosing scalable processes amenable to large area deposition, reduction in the materials consumption of active layers, and attaining faster deposition rates suitable for in-line processing. Selenization-sulfurization of sputtered metallic Cu-In-Ga precursors is known to be more amenable to large area deposition. Sputter-deposited molybdenum thin film is commonly employed as a back contact layer for CIGS solar cells. However, there are several difficulties in fabricating an optimum back contact layer. It is known that molybdenum thin films deposited at higher sputtering power and lower gas pressure exhibit better electrical conductivity. However, such films exhibit poor adhesion to the soda-lime glass substrate. On the other hand, films deposited at lower discharge power and higher pressure although exhibit excellent adhesion show lower electrical conductivity. Therefore, a multilayer structure is normally used so as to get best from the two deposition regimes. A multi-pass processing is not desirable in high volume production because it prolongs total production time and correspondingly increases the manufacturing cost. In order to make manufacturing compliant with an in-line deposition, it is justifiable having fewer deposition sequences. Thorough analysis of pressure and power relationship of film properties deposited at various parameters has been carried out. It has been shown that it is possible to achieve a molybdenum back contact of desired properties in a single deposition pass by choosing the optimum deposition parameters. It is also shown that the film deposited in a single pass is actually a composite structure. CIGS solar cells have successfully been completed on the developed single layer back contact with National Renewable Energy Laboratory (NREL) certified device efficiencies [greater than]11%. The optimization of parameters has been carried out in such a way that the deposition of back contact and metallic precursors can be carried out in identical pressure conditions which is essential for in-line deposition without a need for load-lock. It is know that the presence of sodium plays a very critical role during the growth of CIGS absorber layer and is beneficial for the optimum device performance. The effect of sodium location during the growth of the absorber layer has been studied so as to optimize its quantity and location in order to get devices with improved performance. NREL certified devices with efficiencies [greater than]12% have been successfully completed.

Sputter-deposited Mo thin films are commonly employed as a back contact layer for CIGS and CuInSe2 (CIS)-based solar cells; however, there are several difficulties in fabricating a qualified back contact layer. Generally, Mo thin films deposited at higher sputtering power and lower working gas pressure tend to exhibit lower resistivity; however, such films have a poor adhesion to the glass substrate. On the other hand, films deposited at lower power and higher gas pressure tend to have a higher resistivity, whereas the films exhibit an excellent adhesion to the glass substrate. Therefore, it has been a practice to employ multi-layered Mo thin film back contact layers to achieve the properties of good adhesion to the glass substrate and low resistivity simultaneously. However, multi layer processes have a lower throughput and higher fabricating cost, and requires more elaborated equipment compared to single layer processes, which are not desirable from the industrial point of view. As can be seen, above mentioned process parameters and the corresponding Mo thin film properties are at the two extreme ends of the spectrum. Hence experiments were conducted to find out the mechanisms which influence the properties of Mo thin films by changing the two process parameters of working gas pressure and sputtering power individually. The relationships between process parameters and above mentioned properties were studied and explained. It was found that by selecting the process parameters properly, less resistive, appropriate-surfaced, and highly adhesive single layer Mo thin films for CIGS solar cells can be achieved.

As world population grows the total energy demanded increases. The energy from sources like the photovoltaic cells, emerges as a sustainable, environmentally clean and cost competitive option if produced on a large scale. The current trend in photovoltaic industry passes through increasing efficiency and reducing costs of the modules. A significant part of these costs originates in the semiconductor substrate material, therefore, the tendency is to reduce the thickness of the cells; however, the manufacturing processes need to be optimized. The aim is to implement in-line and contact-less techniques which increase productivity while reduce breakage yield. This work presents the results obtained towards that direction, particularly in the field of emitter formation and metallization.

This work presents a study of morphology and device properties of CIGS2 thin films with Copper-deficient absorbers after minute amounts of sodium are introduced on the Mo-coated substrate in the form of sodium fluoride layer prior to sputter deposition of copper-gallium alloy and indium. Photovoltaic conversion efficiency of 9.15% was obtained for copper-deficient absorbers. In a parallel set of experiments, copper-rich precursors were used to produce absorbers of lower thickness range values and the parameters were optimized. Photovoltaic conversion efficiency of 10.12% was obtained for an absorber of thickness 1.5 [micrometers] and an efficiency of 9.62% was obtained for an absorber of thickness 1.2 [micrometers].

In this work, the impact of structural variations of CIGS solar cells on their temperature coefficients, their stability, and their low light performance is studied. The layer modifications implemented for this study include different buffer, window layers and back contacts materials, and different double graded absorbers with change in their thickness and sodium post deposition treatment. It was demonstrated that the absorber layer exhibits the largest influence on the temperature dependence of the power output amongst all modified layers of the structure. The buffer and the absorber elemental composition showed to play an important role in the elemental interdiffusion and hence led to the creation of amphoteric defects that are light and temperature sensitive. Studies on the impact of different solar cell structures on the shift of the dominant recombination region at different light intensities were also performed.