Exa-scale computing needs to re-examine the existing hardware platform that can support intensive data-oriented computing. Since the main bottleneck is from memory, we aim to develop an energy-efficient in-memory computing platform in this book. First, the models of spin-transfer torque magnetic tunnel junction and racetrack memory are presented. Next, we show that the spintronics could be a candidate for future data-oriented computing for storage, logic, and interconnect. As a result, by utilizing spintronics, in-memory-based computing has been applied for data encryption and machine learning. The implementations of in-memory AES, Simon cipher, as well as interconnect are explained in details. In addition, in-memory-based machine learning and face recognition are also illustrated in this book.

This book provides a comprehensive introduction to spintronics-based computing for the next generation of ultra-low power/highly reliable logic. It will cover aspects from device to system-level, including magnetic memory cells, device modeling, hybrid circuit structure, design methodology, CAD tools, and technological integration methods. This book is accessible to a variety of readers and little or no background in magnetism and spin electronics are required to understand its content. The multidisciplinary team of expert authors from circuits, devices, computer architecture, CAD and system design reveal to readers the potential of spintronics nanodevices to reduce power consumption, improve reliability and enable new functionality.

This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.

This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.

This volume describes computing innovation using non-volatile memory for a sustainable world. The text presents methods of design and implementation for non-volatile memory, allowing devices to be turned off normally when not in use, yet operate with full performance when needed.

In addition to the electron's charge, spintronics deals with the electron's spin and magnetic moment for computation or data storage. Certainly, an extremely promising application of spintronic devices is datastorage; the remanence makes the memory non-volatile and instant-on. Moreover, these devices are thermally stable making them suitable for extreme-temperature operations. In this monograph, we leverage spintronic devices for information processing and do not cover data-storage. We explore three non- Boolean computational framework: (1) Energy minimization based optimizer, which we recently published in Nature Nanotechnology [23], (2) Coupled Oscillatory framework [47] and (3) Neuromorphic learning framework. In Energy minimization framework, we harness the innate physical properties of nanomagnets to directly solve a class of energy minimization problems. Due to the fact that the Hamiltonian of a system of coupled nanomagnets is quadratic, a wide class of quadratic energy minimization can be solved much more quickly by the relaxation of a grid of nanomagnets than by a conventional Boolean processor. Another property that researchers have harnessed is achieving radio-frequency ferromagnetic resonance, which can be harnessed in a system of nano-oscillators to provide solution to dynamical systems. This property is also utilized in neuromorphic frameworks.