Deterministic simulation of the particle transport in semiconductor devices is an interesting alternative to the common Monte Carlo approach. In this book, a state-of-the-art technique called the multigroup approach is presented and applied to a variety of transport problems in bulk semiconductors and semiconductor devices. High-field effects as well as hot-phonon phenomena in polar semiconductors are studied in detail. The mathematical properties of the presented numerical method are studied, and the method is applied to simulating the transport of a two-dimensional electron gas formed at a semiconductor heterostructure. Concerning semiconductor device simulation, several diodes and transistors fabricated of silicon and gallium arsenide are investigated. For all of these simulations, the numerical techniques employed are discussed in detail. This unique study of the application of direct methods for semiconductor device simulation provides the interested reader with an indispensable reference on this growing research area.

Proceedings from the 14th European Conference for Mathematics in Industry held in Madrid present innovative numerical and mathematical techniques. Topics include the latest applications in aerospace, information and communications, materials, energy and environment, imaging, biology and biotechnology, life sciences, and finance. In addition, the conference also delved into education in industrial mathematics and web learning.

This book contains recent contributions in the field of waves propagation and stability in continuous media. The volume is the sixth in a series published by World Scientific since 1999.

Contains contributions in the field of waves propagation and stability in continuous media.

This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.

This book is a unique presentation of thermodynamic methods of construction of continuous models. It is based on a uniform approach following from the entropy inequality and using Lagrange multipliers as auxiliary quantities in its evaluation. It covers a wide range of models — ideal gases, thermoviscoelastic fluids, thermoelastic and thermoviscoelastic solids, plastic polycrystals, miscible and immiscible mixtures, and many others. The structure of phenomenological thermodynamics is justified by a systematic derivation from the Liouville equation, through the BBGKY-hierarchy-derived Boltzmann equation, to an extended thermodynamics. In order to simplify the reading, an extensive introduction to classical continuum mechanics and thermostatics is included. As a complementary volume to Part II, which will contain applications and examples, and to Part III, which will cover numerical methods, only a few simple examples are presented in this first Part. One exception is an extensive example of a linear poroelastic material because it will not appear in future Parts.The book is the first presentation of continuum thermodynamics in which foundations of continuum mechanics, microscopic foundations and transition to extended thermodynamics, applications of extended thermodynamics beyond ideal gases, and thermodynamic foundations of various material theories are exposed in a uniform and rational way. The book may serve both as a support for advanced courses as well as a desk reference.

This book is a unique presentation of thermodynamic methods of construction of continuous models. It is based on a uniform approach following from the entropy inequality and using Lagrange multipliers as auxiliary quantities in its evaluation. It covers a wide range of models — ideal gases, thermoviscoelastic fluids, thermoelastic and thermoviscoelastic solids, plastic polycrystals, miscible and immiscible mixtures, and many others. The structure of phenomenological thermodynamics is justified by a systematic derivation from the Liouville equation, through the BBGKY-hierarchy-derived Boltzmann equation, to an extended thermodynamics. In order to simplify the reading, an extensive introduction to classical continuum mechanics and thermostatics is included. As a complementary volume to Part II, which will contain applications and examples, and to Part III, which will cover numerical methods, only a few simple examples are presented in this first Part. One exception is an extensive example of a linear poroelastic material because it will not appear in future Parts.The book is the first presentation of continuum thermodynamics in which foundations of continuum mechanics, microscopic foundations and transition to extended thermodynamics, applications of extended thermodynamics beyond ideal gases, and thermodynamic foundations of various material theories are exposed in a uniform and rational way. The book may serve both as a support for advanced courses as well as a desk reference.