This comprehensive new resource based on the classic Artech House title, Microwave Materials for Wireless Applications, introduces the use of new microwave materials for passive devices including ferrites, magnetization garnets, dielectric materials, and absorbers for wireless and antenna applications. This book explores a new set of magnetic and dielectric materials that assist with size reduction of passive devices such as ferrite isolators and circulators. Revised data on the applications of absorbers, including examples of different combinations of magnetic, dielectric, and absorber materials into integrated devices is presented. Meta-materials for antennas and potential antenna integration onto soft boards or LTCC filter technologies using tunable devices with new materials are covered. Professionals learn how new material designs use properties of certain ions in oxide compounds to reduce their physical size, including in cellular base stations designed for 4G and 5G cell phone communication systems. This book exhibits how the integration of new materials into cellular systems using common transmission lines will further save size and reduce complexity. New technologies are presented demonstrating the use of sol-gel processing and ceramic processing in the use of low temperature co-fired ceramics, plastic molding, and 3D printing demonstrating improved device designs.

This book is a practical engineering guide to microwave material measurements for both laboratory and manufacturing/field environments, including nondestructive inspection (NDI) and nondestructive evaluation (NDE). The book covers proven methods for characterizing materials at microwave frequencies, including both resonant and wide-bandwidth techniques, and gives you the necessary theory and equations for implementing these methods. You’ll understand how to invert dielectric and/or magnetic material properties from free space transmission and reflection, and how to measure traveling wave attenuation. You’ll also know how to measure dielectric and/or magnetic material properties from transmission line fixtures, and learn how to use computational electromagnetic modeling with a measurement fixture. The book shows you how to build and use microwave NDE equipment for radomes and/or structural dielectric materials. This is an excellent resource for Engineers/scientists conducting or analyzing RF/Microwave/MMW material measurements for applications in electromagnetic materials, as well as those who are developing or applying microwave non-destructive evaluation (NDE) methods to their manufacturing problems.

This comprehensive resource explains the theory of RF circuits and systems and the practice of designing them. The fundamentals for linear and low noise amplifier designs, including the S and noise parameters and their applications in amplifier designs and matching network designs using the Smith chart are covered. Theories of RF power amplifiers and high efficiency power amplifiers are also explained. The underpinnings of wireless communications systems as well as passive components commonly used in RF circuits and measurements are discussed. RF measurement techniques and RF switches are also presented. The book explores stability criteria and the invariant property of lossless networks and includes detailed theoretical treatments. The basic concepts and techniques covered in this book are routinely used in today's engineering practice, especially from the perspective of printed circuit board (PCB) based RF circuit design and system integration. Intended for practicing engineers and circuit designers, this book focuses on practical topics in circuit design and measurement techniques. It bridges the gap between academic materials and real circuit designs using real circuit examples and practical tips. Readers develop a numerical feel for RF problems as well as awareness of the concepts of design for cost and design for manufacturing, which is a critical skill set for today's engineers working in an environment of commercial product development.

This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.

This book gives you – in one comprehensive and practical resource -- everything you need to successfully design modern and sophisticated power amplifiers at mmWave frequencies. The book provides an in-depth treatment of the design methodology for MMIC power amplifiers, then brings you step by step through the various phases of design, from the selection of technology and preliminary architecture considerations, to the effective design of the matching circuits and conversion of electrical-to-electromagnetic models. Detailed figures and numerous practical applications are included to help you gain valuable insights into these technologies and learn to identify the best path to a successful design. You’ll be guided through a range of new mmWave power applications that show particular promise to support new 5G systems, while mastering the use of GaN technology that continues to dominate the power mmWave applications due to its high power, gain, and efficiency. This is a valuable resource for power amplifier design engineers, technicians, industry R&D staff, and anyone getting into the area of power MMICs who wants to learn how to design at mmWave frequencies.

Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used—the Angelov (or Chalmers) model.

This exciting new book examines the feasibility of using a method of doubling the capacity of cellular networks by simultaneously transmitting and receiving signals at the same frequency, a process known as full duplexing (FD). To realize full duplexing, changes in the hardware of the cell- base stations, relaying equipment, “hot spot” access points and mobile phones are necessary to prevent the hardware’s transmitters from interfering with their own receivers. This requires looking at how to separate the strong transmitted signal from the very weak received signal, a process requiring both hardware (analog) changes and more complex digital signal processing. Different ways of achieving that goal are examined. The books reviews the merits of hardware changes involving new duplexing components that may be different depending on the frequency band and cell hardware being used. Developing full duplex (FD) systems in 5G LTE cellular communications and what can be achieved with ferrite-based circulators in terms of size reduction and performance enhancement, especially at millimetric frequencies, is considered. The relative merits of ferrite and non-ferrite circulators are compared in terms of their fundamental materials and device technologies, such as isolation, insertion loss, bandwidth and non-linearity. FD in the entire 5G cell is also examined and its resulting range of equipment and device communication. This includes front-hauling, more sophisticated back and front-hauling, backhaul beam switching, and cell extenders and relays, all of which could involve FD.