This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies. With this book you will learn: - The theoretical background of high-frequency de-embedding for measurements, modelling, and design - Details on applying the de-embedding concept to the transistor's linear, non-linear, and noise behaviour - The impact of de-embedding on low-noise and power amplifier design - The recent advances and future trends in the field of high-frequency de-embedding - Presents the theory and practice of microwave de-embedding, from the basic principles to recent advances and future trends - Written by experts in the field, all of whom are leading researchers in the area - Each chapter describes theoretical background and gives experimental results and practical applications - Includes forewords by Giovanni Ghione and Stephen Maas

This new authoritative resource presents the basics of network analyzer measurement equipment and troubleshooting errors involved in the on-wafer microwave measurement process. This book bridges the gap between theoretical and practical information using real-world practices that address all aspects of on-wafer passive device characterization in the microwave frequency range up to 60GHz. Readers find data and measurements from silicon integrated passive devices fabricated and tested in advance CMOS technologies. Basic circuit equations, terms and fundamentals of time and frequency domain analysis are covered. This book also explores the basics of vector network analyzers (VNA), two port S-parameter measurement routines, signal flow graphs, network theory, error models and VNA calibrations with the use of calibration standards.

This work presents an overview of the various facets of microwave device behavioral modeling technology, from the mathematical formulation to the required laboratory parameter extraction, focusing its attention on one of the less covered aspects: the embedding and de-embedding procedures associated with the behavioral model extraction process. The discussion starts with the revision of some of the most important behavioral modeling tools, explaining the three most important types of behavioral model formats (polynomial, artificial neural networks, and table-based models) and their instantiation in the context of microwave transistors. Then, it will evolve to the behavioral model parameter extraction procedures, reviewing the required specific microwave instrumentation and correspondent calibration and de-embedding of measurement data. Finally, this chapter will illustrate the use of embedding and de-embedding procedures in the behavioral modeling context, giving a particular emphasis on the needed behavioral model inversion techniques.

An overview of topics is presented related to noise characterization and modeling of linear, active devices for microwave applications, as well as to advanced methodologies for low-noise design. A complete description of the most common noise measurement techniques, namely the Y-factor method and the cold source method, are provided, with particular attention being paid to practical aspects such as de-embedding the measurement at the device under test reference planes, possible sources of error, and uncertainty estimation. Noise modeling is approached from a well-established standpoint, based on the extraction of a small-signal equivalent circuit model; but also source pull-based techniques—both standard and advanced ones—are broadly illustrated. Finally, a comprehensive discussion on design of single- and multistage low-noise amplifiers is proposed, ranging from the most classical tools and methodologies, such as constant-gain and constant-noise circles, to novel graphical tools and more advanced concepts, such as global mismatch limits and noise measure.

The chapter deals with two recently proposed characterization techniques of microwave transistors oriented to high-frequency power amplifier (PA) design. In particular, the nonlinear embedding and de-embedding design techniques are detailed, along with evidence of their advantages with respect to conventional design approaches in terms of power and frequency handling capability. The discussion also details the differences between the two techniques; despite the fact that they share the same theoretical basis, the techniques suffer from different critical facets. Finally, with the aim of guiding the reader towards full comprehension of the topic, different experimental examples are provided for transistor characterization and PA design.

The world is often considered to behave approximately linearly. However, many real-life phenomena are inherently nonlinear! Hence, in order to accurately model the true behavior of a radio-frequency device or system, its nonlinear characteristics can no longer be ignored and should be taken into account. To do so, one should first be able to measure these nonlinear effects. After some years of hesitation, the high-frequency measurement world finally acknowledged the necessity to accurately measure the in- and out-of-band nonlinear behavior of a radio-frequency (RF) device or system. Since then, different measurement approaches have been developed to achieve this goal. The two major measurement principles being pursued are the sampler-based and the mixer-based methodology. The calibration and de-embedding process of nonlinear measurements is quite involved and requires special calibration standards. From the acquired “nonlinear” measurement data, one can then build a model that accurately describes the in-band and out-of-band nonlinear behavior of an RF system. This chapter will show the reader how to do accurate nonlinear RF measurements and how to obtain a simple and robust characterization of the nonlinear behavior of an RF system.

This chapter aims to describe experimental tools and techniques used for on-wafer millimeter (mm)-wave characterizations of silicon-based devices under the small-signal regime. We discuss the basics of scattering parameters (S parameters), high-frequency (HF) noise concept and measurement facilities, and expert details concerning experimental procedures. In this chapter, we describe first the basic notions of the S-parameters concept and its limitations, as well of as those HF noise. Secondly, the main experimental tools such as mm-wave vectorial network analyzer, noise setup, and on-wafer station are depicted. The third part concerns the description and the methodology of on-wafer calibration and de-embedding techniques applied for mm-wave advanced silicon devices. Finally, the last section focuses on the presentation and description of several examples of device characterizations. The main objective of this chapter is to propose a tradeoff between basic information and details of experience.