Using memristors one can achieve circuit functionalities that are not possible to establish with resistors, capacitors and inductors, therefore the memristor is of great pragmatic usefulness. Potential unique applications of memristors are in spintronic devices, ultra-dense information storage, neuromorphic circuits and programmable electronics. Memristor Networks focuses on the design, fabrication, modelling of and implementation of computation in spatially extended discrete media with many memristors. Top experts in computer science, mathematics, electronics, physics and computer engineering present foundations of the memristor theory and applications, demonstrate how to design neuromorphic network architectures based on memristor assembles, analyse varieties of the dynamic behaviour of memristive networks and show how to realise computing devices from memristors. All aspects of memristor networks are presented in detail, in a fully accessible style. An indispensable source of information and an inspiring reference text, Memristor Networks is an invaluable resource for future generations of computer scientists, mathematicians, physicists and engineers.

This Handbook presents all aspects of memristor networks in an easy to read and tutorial style. Including many colour illustrations, it covers the foundations of memristor theory and applications, the technology of memristive devices, revised models of the Hodgkin-Huxley Equations and ion channels, neuromorphic architectures, and analyses of the dynamic behaviour of memristive networks. It also shows how to realise computing devices, non-von Neumann architectures and provides future building blocks for deep learning hardware. With contributions from leaders in computer science, mathematics, electronics, physics, material science and engineering, the book offers an indispensable source of information and an inspiring reference text for future generations of computer scientists, mathematicians, physicists, material scientists and engineers working in this dynamic field.

This book provides a comprehensive overview of current research on memristors, memcapacitors and, meminductors. In addition to an historical overview of the research in this area, coverage includes the theory behind memristive circuits, as well as memcapacitance, and meminductance. Details are shown for recent applications of memristors for resistive random access memories, neuromorphic systems and hybrid CMOS/memristor circuits. Methods for the simulation of memristors are demonstrated and an introduction to neuromorphic modeling is provided.

Artificial Intelligence (AI) has found many applications in the past decade due to the ever increasing computing power. Artificial Neural Networks are inspired in the brain structure and consist in the interconnection of artificial neurons through artificial synapses. Training these systems requires huge amounts of data and, after the network is trained, it can recognize unforeseen data and provide useful information. The so-called Spiking Neural Networks behave similarly to how the brain functions and are very energy efficient. Up to this moment, both spiking and conventional neural networks have been implemented in software programs running on conventional computing units. However, this approach requires high computing power, a large physical space and is energy inefficient. Thus, there is an increasing interest in developing AI tools directly implemented in hardware. The first hardware demonstrations have been based on CMOS circuits for neurons and specific communication protocols for synapses. However, to further increase training speed and energy efficiency while decreasing system size, the combination of CMOS neurons with memristor synapses is being explored. The memristor is a resistor with memory which behaves similarly to biological synapses. This book explores the state-of-the-art of neuromorphic circuits implementing neural networks with memristors for AI applications.

The investigation of new memory schemes, neural networks, computer systems and many other improved electronic devices is very important for future generation's electronic circuits and for their widespread application in all the areas of industry. In this aspect the analysis of new efficient and advanced electronic elements and circuits is an essential field of the highly developed electrical and electronic engineering. The resistance-switching phenomenon, observed in many amorphous oxides has been investigated since 1970 and it is a promising technology for constructing new electronic memories. It has been established that such oxide materials have the ability for changing their conductance in accordance to the applied voltage and memorizing their state for a long-time interval. Similar behaviour has been predicted for the memristor element by Leon Chua in 1971. The memristor is proposed in accordance to symmetry considerations and the relationships between the four basic electric quantities - electric current i, voltage v, charge q and magnetic flux Ψ. The memristor is an essential passive one-port element together with the resistor, inductor, and capacitor. The Williams HP research group has made a link between resistive switching devices, and the memristor proposed by Chua. A number of scientific papers related to memristors and memristor devices have been issued and several memristor models have been proposed. The memristor is a highly nonlinear component. It relates the electric charge q and the flux linkage, expressed as a time integral of the voltage. The memristor element has the important capability for remembering the electric charge passed through its cross-section and its respective resistance, when the electrical signals are switched off. Due to its nano-scale dimensions, non-volatility and memorizing properties, the memristor is a sound potential candidate for application in computer high-density memories, artificial neural networks and in many other electronic devices.

This book provides readers with a single-source guide to fabricate, characterize and model memristor devices for sensing applications. The authors describe a correlated, physics-based model to simulate and predict the behavior of devices fabricated with different oxide materials, active layer thickness, and operating temperature. They discuss memristors from various perspectives, including working mechanisms, different synthesis methods, characterization procedures, and device employment in radiation sensing and security applications.

Physical implementation of the memristor at industrial scale sparked the interest from various disciplines, ranging from physics, nanotechnology, electrical engineering, neuroscience, to intelligent robotics. As any promising new technology, it has raised hopes and questions; it is an extremely challenging task to live up to the high expectations and to devise revolutionary and feasible future applications for memristive devices. The possibility of gathering prominent scientists in the heart of the Silicon Valley given by the 2011 International Joint Conference on Neural Networks held in San Jose, CA, has offered us the unique opportunity of organizing a series of special events on the present status and future perspectives in neuromorphic memristor science. This book presents a selection of the remarkable contributions given by the leaders of the field and it may serve as inspiration and future reference to all researchers that want to explore the extraordinary possibilities given by this revolutionary concept.