What right did I possess, as a child of survivors, to recreate an account of the Holocaust as if I was there? In writing The Fiftieth Gate, Mark Baker describes a journey from despair and death towards hope and life; it is the story of a son who enters his parents’ memories and, inside the darkness, finds light. In his evocative prose, Baker takes us to this place of horror, and then brings us back to reflect on these events and remember: ‘Never again’. Across the silence of fifty years, Baker and his family travel from Poland and Germany to Jerusalem and Melbourne, as the author struggles to uncover the mystery of his parents’ survival: his father Yossl was imprisoned in concentration camps and his mother Genia was forced into hiding after the Jews of her village were murdered. Twenty years on from its first publication, The Fiftieth Gate remains an extraordinary book. It has become a classic and has now sold over 70,000 copies. In Baker's new introduction, he recalls his motivations for writing this important memoir, and highlights how the testimonial culture in Holocaust studies has spread to awareness of other genocides and our responsibility (and failure) to prevent them. As well as The Fiftieth Gate, A Journey Through Memory, a seminal book on his parents’ experience during the Holocaust, Mark Raphael Baker wrote a compelling memoir, Thirty Days, A Journey to the End of Love, about the death of his wife. He was Director of the Australian Centre for Jewish Civilisation and Associate Professor of Holocaust and Genocide Studies in the School at Monash University, Melbourne. He died in 2023. ‘Heartrending and beautiful...This simply written, subtly complex narrative is instantly recognisable as a masterpiece, and the reader is rewarded by the light it sheds.’ Age ‘Combining precise historical research and poetic eloquence, Mark Baker’s The Fiftieth Gate remains the gold standard of second generation Holocaust memoirs on the occasion of its twentieth anniversary edition.’ Christopher R. Browning ‘Baker does with memory, what Rembrandt does with light. He uses it to model, to imagine, to illuminate, to astonish.’ Philip Adams

The blockbuster phenomenon that charts an amazing journey of the mind while revolutionizing our concept of memory “Highly entertaining.” —Adam Gopnik, The New Yorker “Funny, curious, erudite, and full of useful details about ancient techniques of training memory.” —The Boston Globe An instant bestseller that has now become a classic, Moonwalking with Einstein recounts Joshua Foer's yearlong quest to improve his memory under the tutelage of top "mental athletes." He draws on cutting-edge research, a surprising cultural history of remembering, and venerable tricks of the mentalist's trade to transform our understanding of human memory. From the United States Memory Championship to deep within the author's own mind, this is an electrifying work of journalism that reminds us that, in every way that matters, we are the sum of our memories.

Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. - Features contributions from experts from leading companies in semiconductor memory - Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories - Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory - Includes emerging storage class memory technologies such as phase change memory

A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].

Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include:  Radiation effects on semiconductor components (TID, SEE) Radiation Hardening by Design (RHBD) Techniques Rad-hard SRAMs Rad-hard PROMs Rad-hard Flash NVMs Rad-hard ReRAMs Rad-hard emerging technologies

The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined. Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based product development process. The Performance Indicator methodology is applied to demonstrate the importance of hidden memory parameters for a successful product and system development roadmap. Flash Memories offers an opportunity to enhance your understanding of product development key topics such as: · Reliability optimization of flash memories is all about threshold voltage margin understanding and definition; · Product performance parameter are analyzed in-depth in all aspects in relation to the threshold voltage operation window; · Technical characteristics are translated into quantitative performance indicators; · Performance indicators are applied to identify and quantify product and technology innovation within adjacent areas to fulfill the application requirements with an overall cost optimized solution; · Cost, density, performance and durability values are combined into a common factor – performance indicator - which fulfills the application requirements