This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.

Circuit Simulation.- A new efficient numerical integration scheme for highly oscillatory electric circuits.- Numerische Lösung von hierarchisch strukturierten Systemen von Algebro-Differentialgleichungen.- Partitioning and multirate strategies in latent electric circuits.- Circuit simulation - an application for parallel ODE solvers?.- Numerical stability criteria for differential-algebraic systems.- Analysis of linear time-invariant networks in the frequency domain.- Limit cycle computation of oscillating electric circuits.- Timestep control for charge conserving integration in circuit simulation.- Ein Zusammenhang zwischen Waveformrelaxation und Iterationsverfahren für nichtlinear gestörte Gleichungen.- Multilevel-Newton-Verfahren in der Transientenanalyse elektrischer Netzwerke.- Transientensimulation elektrischer Netwerke mit TRBDF.- The transient behavior of an oscillator.- Device Simulation.- Numerical simulation of the carrier transport in semiconductor devices on the base of an energy model.- On uniqueness of solutions to the drift-diffusion-model of semiconductor devices.- On restrictions for discretizations of the simplified linearized van Roosbroeck's equations.- Mixed finite element discretization of continuity equations arising in semiconductor device simulation.- A piecewise linear Petrov-Galerkin analysis of the box-method.- Stability analysis of thermocapillary convection in semiconductor crystal growth.- The method of Baliga-Patankar and 3-D device simulation.- A mass conserving moving grid method for dopant simulation.- Numerical approaches to the kinetic semiconductor equations.- The non-stationary semiconductor model with bounded convective velocity and generation/recombination term.

This book presents the selected results of the XI Scientific Conference Selected Issues of Electrical Engineering and Electronics (WZEE) which was held in Rzeszów and Czarna, Poland on September 27-30, 2013. The main aim of the Conference was to provide academia and industry to discuss and present the latest technological advantages and research results and to integrate the new interdisciplinary scientific circle in the field of electrical engineering, electronics and mechatronics. The Conference was organized by the Rzeszów Division of Polish Association of Theoretical and Applied Electrical Engineering (PTETiS) in cooperation with Rzeszów University of Technology, the Faculty of Electrical and Computer Engineering and Rzeszów University, the Faculty of Mathematics and Natural Sciences.

Progress in today's high-technology industries is strongly associated with the development of new mathematical tools. A typical illustration of this partnership is the mathematical modelling and numerical simulation of electric circuits and semiconductor devices. At the second Oberwolfach conference devoted to this important and timely field, scientists from around the world, mainly applied mathematicians and electrical engineers from industry and universities, presented their new results. Their contributions, forming the body of this work, cover electric circuit simulation, device simulation and process simulation. Discussions on experiences with standard software packages and improvements of such packages are included. In the semiconductor area special lectures were given on new modelling approaches, numerical techniques and existence and uniqueness results. In this connection, mention is made, for example, of mixed finite element methods, an extension of the Baliga-Patankar technique for a three dimensional simulation, and the connection between semiconductor equations and the Boltzmann equations.

Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues discussed in this area include the design of simulation programs for semiconductors, vectorcomputers, and interface problems in several dimensions. Topics discussed in the area of circuit simulation include the index classification of differential-algebraic systems, connections with ill-posed problems, and regularization techniques. Split discretization procedures were given for the efficient calculation of periodic solutions of circuits taking into acount the latency. Homotopy methods and new numerical techniques for differential-algebraic systems were presented, and im provements of special numerical methods for standard software packages were sug gested. The editors VII Table of Contents Circuit Simulation Merten K.

The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.