This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.

MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.

Proceedings of the IUTAM Symposium held in Abisko National Park, Kiruna, Sweden, July 31-August 4, 2000

The inexorable drive for increased integrated circuit functionality and performance places growing demands on the metal and dielectric thin films used in fabricating these circuits, as well as spurring demand for new materials applications and processes. This book directly addresses issues of widespread concern in the microelectronics industry - smaller feature sizes, new materials and new applications that challenge the reliability of new technologies. While the book continues the focus on issues related to interconnect reliability, such as electromigration and stress, particular emphasis is placed on the effects of microstructure. An underlying theme is understanding the importance of interactions among different materials and associated interfaces comprising a single structure with dimensions near or below the micrometer scale. Topics include: adhesion and fracture; gate oxide growth and oxide interfaces; surface preparation and gate oxide reliability; oxide degradation and defects; micro-structure, texture and reliability; novel measurement techniques; interconnect performance and reliability modeling; electromigration and interconnect reliability and stress and stress relaxation.

The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. To meet requirements of the ITRS roadmap, new materials are being introduced at a faster pace in all functions of multilevel interconnects. The issues addressed in this book cannot be dispelled as simply selecting a low-k material and integrating it into a copper damascene process. The intricacies of the back end for sub-100nm technology include novel processing of low-k materials, employing pore-sealing techniques and capping layers, introducing advanced dielectric and diffusion barriers, and developing novel integration schemes. This is in addition to concerns of performance, yield, and reliability appropriate to nanoscaled interconnects. Although many challenges continue to impede progress along the ITRS roadmap, the contributions in this book confront them head-on. It provides a scientific understanding of the issues and stimulate new approaches to advanced multilevel interconnects.