Mobile and wireless communications applications have a clear impact on improving the humanity wellbeing. From cell phones to wireless internet to home and office devices, most of the applications are converted from wired into wireless communication. Smart and advanced wireless communication environments represent the future technology and evolutionary development step in homes, hospitals, industrial, vehicular and transportation systems. A very appealing research area in these environments has been the wireless ad hoc, sensor and mesh networks. These networks rely on ultra low powered processing nodes that sense surrounding environment temperature, pressure, humidity, motion or chemical hazards, etc. Moreover, the radio frequency (RF) transceiver nodes of such networks require the design of transmitter and receiver equipped with high performance building blocks including antennas, power and low noise amplifiers, mixers and voltage controlled oscillators. Nowadays, the researchers are facing several challenges to design such building blocks while complying with ultra low power consumption, small area and high performance constraints. CMOS technology represents an excellent candidate to facilitate the integration of the whole transceiver on a single chip. However, several challenges have to be tackled while designing and using nanoscale CMOS technologies and require innovative idea from researchers and circuits designers. While major researchers and applications have been focusing on RF wireless communication, optical wireless communication based system has started to draw some attention from researchers for a terrestrial system as well as for aerial and satellite terminals. This renewed interested in optical wireless communications is driven by several advantages such as no licensing requirements policy, no RF radiation hazards, and no need to dig up roads besides its large bandwidth and low power consumption. This second part of the book, Mobile and Wireless Communications: Key Technologies and Future Applications, covers the recent development in ad hoc and sensor networks, the implementation of state of the art of wireless transceivers building blocks and recent development on optical wireless communication systems. We hope that this book will be useful for students, researchers and practitioners in their research studies.

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Appropriate for upper level undergraduate or graduate courses in microwave transistor amplifiers and oscillators. It would also be useful for short-courses in companies that design and produce these devises. A unified presentation of the analysis and design of microwave transistor amplifiers (and oscillators) -- using scattering parameters techniques.

This book draws together all the important MMIC design methods and circuit topologies into one volume. It is essential reading as both a tutorial guide for those new to MMIC design and as a circuit design handbook for experienced designers. The contributors are acknowledged experts from industry and academia. The first four chapters describe the active and passive components, processing technology and CAD techniques. The design of the circuits is then covered in individual chapters treating amplifiers, mixers, phase shifters, switches and attenuators, and oscillators. The final three chapters describe silicon millimetre-wave circuits, measurement techniques and advanced circuit concepts.

This is one of the first books on the emerging research topic of digital compensation of RF imperfections. The book presents a new multidisciplinary vision on the design of wireless communication systems. In this approach the imperfections of the RF front-ends are accepted and digital signal processing algorithms are designed to suppress their impact on system performance. The book focuses on multiple-antenna orthogonal frequency division multiplexing (MIMO OFDM).