Carbon has always been a unique and intriguing material from a funda mental standpoint and, at the same time, a material with many technological uses. Carbon-based materials, diamond, graphite and their many deriva tives, have attracted much attention in recent years for many reasons. Ion implantation, which has proven to be most useful in modifying the near surface properties of many kinds of materials, in particular semiconductors, has also been applied to carbon-based materials. This has yielded, mainly in the last decade, many scientifically interesting and technologically impor tant results. Reports on these studies have been published in a wide variety of journals and topical conferences, which often have little disciplinary overlap, and which often address very different audiences. The need for a review to cover in an integrated way the various diverse aspects of the field has become increasingly obvious. Such a review should allow the reader to get an overview of the research that has been done thus far, to gain an ap preciation of the common features in the response of the various carbon to ion impact, and to become aware of current research oppor allotropes tunities and unresolved questions waiting to be addressed. Realizing this, and having ourselves both contributed to the field, we decided to write a review paper summarizing the experimental and theoretical status of ion implantation into diamond, graphite and related materials.

Providing in a single volume all essential information on the physical properties of alkali halides, this book will be a valuable reference for solid-state physicists and materials scientists.

Optical Properties of Metal Clusters deals with the electronic structure of metal clusters determined optically. Clusters - as state intermediate between molecules and the extended solid - are important in many areas, e.g. in air pollution, interstellar matter, clay minerals, photography, heterogeneous catalysis, quantum dots, and virus crystals. This book extends the approaches of optical molecular and solid-state methods to clusters, revealing how their optical properties evolve as a function of size. Cluster matter, i.e. extended systems of many clusters - the most frequently occuring form - is also treated. The combination of reviews of experimental techniques, lists of results and detailed descriptions of selected experiments will appeal to experts, newcomers and graduate students in this expanding field.

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this second edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and in-growth control of the MBE crystallization process of strained-layer structures. Out-of-date material has been removed.

A comprehensive presentation and analysis of properties and methods of formation of semiconducting silicides. Fundamental electronic, optical and transport properties of the silicides collected from recent publications will help readers choose their application in new generations of solid-state devices. A comprehensive presentation of thermodynamic and kinetic data is given in combination with their technical application, as is information on corresponding thin-film or bulk crystal formation techniques.

A description of the design principles, seen mainly from the fabrication point of view. Following a review of the historical development and of the materials used in lasing at short to long wavelengths, the book goes on to discuss the basic design principles for semiconductor-laser devices and the epitaxy for laser production. One entire chapter is devoted to the technology of liquid-phase epitaxy, while another treats vapor-phase and beam epitaxies. The whole is rounded off with mode-control techniques and an introduction to surface-emitting lasers.

A lucid account of the fundamental physics of all types of microclusters, outlining the dynamics and static properties of this new phase of matter between a solid and a molecule. Since the book's first publication, the field of microclusters has experienced surprising developments, which are reviewed in this new edition: The determination of atomic structure, spontaneous alloying, super-shell, fission, fragmentation, evaporation, magnetism, fullerenes, nanotubes, atomic structure of large silicon clusters, superfluidity of a He cluster, water clusters in liquid, electron correlation and optimizsation of the geometry, and scattering.