This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.

A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.

We report on a solid-source method to introduce dopants or controlled impurities directly into the melt zone during float-zone growth of single- or multicrystalline ingots. Unlike the Czochralski (CZ) growth situation, float-zoning allows control over the levels of some impurities (O, C) that cannot be avoided in CZ growth or ingot casting. But aside from impurity studies, the method turns out to be very practical for routine p-type doping in semicontinuous growth processes such as float-zoning, electromagnetic casting, or melt-replenished ribbon growth. Equations governing dopant incorporation, dopant withdrawal, and N co-doping are presented and experimentally verified. Doping uniformity and doping initiation and withdrawal time constants are also reported. The method uses nontoxic source materials and is flexible with quick turnaround times for changing doping levels. Boron p-type doping with nitrogen co-doping is particularly attractive for silicon lattice strengthening against process-induced dislocation motion and also allows greater freedom from incorporation of Si self-interstitial cluster or A and B swirl-type defects and"D"--Type microdefects than nitrogen-free p-type material.

Volume is indexed by Thomson Reuters CPCI-S (WoS).

The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.

The world of materials is exciting because new materials are evolving daily. After an introduction to materials science, the book addresses the classification and structure of matter. It moves on to discuss crystal and mechanical properties. Next, the book employs various materials such as semiconductors and iron wires to teach concepts such as electrical conductivity, heat conductivity and allotropes. Corrosion is addressed and a chapter dedicated to interpretation of graphs and diagrams in materials science is presented. The book then progresses with chapters on ceramics, biomaterials, polymers and composites. To address the growing importance of recycling materials, polymer identification codes are explained. Interesting topics such as accidental materials discovery and materials failure are included. Each chapter ends with a chapter summary and questions and answers. Illustrations and worked examples are provided throughout. A lab manual is included as well. Presents an broad overview of materials science topics, including such topics as: crystal and mechanical properties of materials, semiconductors and iron wires, corrosion, ceramics, biomaterials, polymers, and composite materials; Examines modern-day materials, their synthesis, properties, alteration, and applications; Includes supplemental material, such as a lab manual and examples.