Diffusion in metals is an important phenomenon, which has many applications, for example in all kinds of steel and aluminum production, and in alloy formation (technical applications e.g. in superconductivity and semiconductor science). In this book the data on diffusion in metals are shown, both in graphs and in equations.Reliable data on diffusion in metals are required by researchers who try to make sense of results from all kinds of metallurgical experiments, and they are equally needed by theorists and computer modelers. The previous compilation dates from 1990, and measurements relying on the electron microprobe and the recent Rutherford backscattering technique were hardly taken into account there.This reference book, containing all results on self-diffusion and impurity diffusion in pure metals with an indication of their reliability, will be useful to everyone in this field for the theory, fundamental research and industrial applications covered.• Up-to-date and complete (including EPMA and RBS investigations)• Indication of reliability of the measurements• Reassessment of many early results• Data can easily be extracted from Tables and Graphs

The systematic investigation of self-diffusion and impurity diffusion in metals began as a result of the availability of a wide variety of artificial radio- isotopes following the Second World War. During the following years, rapid advances in the theory of solid-state diffusion and the ever-increasing number of experimental data were comprehensively described in any number of textbooks and review papers. But impurity diffusion in metals was more or less superficially treated in the textbooks, and some of the review papers, with the result that - even up to now - a comprehensive review of the correct interpretation of impurity diffusion in metals has been lacking.

Atomic diffusion in metals was first discovered some sixty-five years ago, and since then a considerable wealth of data has ac cumulated on diffusion in various systems. However, work prior to about the year 1940 is now mainly of historical interest, since ex periments were often carried out under experimental conditions and with methods of analysis leading to uncertainties in inter preting the measured diffusion coefficients. Data on diffusion rates are of importance in processes which are controlled by rates of atomic migration such as growth of phases and homogenization of alloys. In addition diffusion plays an important part in theories of such phenomena as oxidation, plastic deformation, sintering, and creep. A tremendous advance in diffusion studies was made possible by the availability of radioactive isotopes of sufficiently high spe cific activity after the second world war. Measurements of self diffusion rates then became possible using radioactive isotopes having the same chemical properties as the solvent material, and it also became possible to study tracer impurity diffusion when the concentration of the impurity is so small as not to alter the chemi cal homogeneity of the system. In the last ten to fifteen years the purity of materials used in diffusion studies has increased con siderably and the methods of analysis have become more stand ardized.

This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

The interest in diffusion in solids is as old as physical metallurgy or materials science. It stems from application-oriented as well as from scientific reasons. First, a knowledge of diffusion is basic to an understanding of many microstructural changes that occur in solid matter at elevated temperatures. For processes like phase transformations, precipitation or dissolution of a second phase, recrystallization, oxidation, creep, annealing etc., solid state diffusion is fundamental and ubiquitous. The second reason for studying diffusion is to learn more about how atoms move in solid matter. Volume III/26 presents for the first time a comprehensive collection of diffusion data for solid metals and alloys. The critical compilation of data has resulted in tables and series of diagrams which show in 13 chapters data for the following properties: Self- and impurity-diffusion in metallic elements, self-diffusion in homogeneous binary alloys, chemical diffusion in binary and ternary alloys, diffusion in amorphous alloys, diffusion of interstitial foreign atoms like hydrogen, carbon, oxygen and nitrogen in metallic elements, mass and pressure dependence of diffusion, diffusion along dislocations, grain and interphase boundary diffusion, and diffusion on surfaces.

A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.

This book describes the central aspects of diffusion in solids, and goes on to provide easy access to important information about diffusion in metals, alloys, semiconductors, ion-conducting materials, glasses and nanomaterials. Coverage includes diffusion-controlled phenomena including ionic conduction, grain-boundary and dislocation pipe diffusion. This book will benefit graduate students in such disciplines as solid-state physics, physical metallurgy, materials science, and geophysics, as well as scientists in academic and industrial research laboratories.