This research and reference text provides up-to-date coverage of the latest research on hot carriers in semiconductors, with a focus on the background, theoretical approaches, measurements and physical understanding required to engage with the field. Pitched at an introductory level, it equips researchers transitioning from optics to fully understand the role of hot carriers in semiconductors, and is a core text for graduate courses in hot carrier phenomena.

Hot-Electron Transport in Semiconductors (Topics in Applied Physics).

This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.

A comprehensive account of the latest developments in the rapidly expanding area of Semiconductor Technology. Main topics covered include real space transfer/heterostructures, ultrafast studies, optical studies, transport theory, devices, ballistic transport, scattering processes and hot phonons, tunnelling, far infrared and magnetic field studies and impact ionization/noise/chaos. Other aspects include the use of femtosecond lasers in investigating transient hot carrier effects on femtosecond timescales, magnetotransport and carrier-carrier interactions.

This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.

Nonequilibrium hot charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book, one of the first on the topic, discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices. The work will provide scientists and device engineers with an authoritative review of the most exciting recent developments in this rapidly moving field. It should be read by all those who wish to learn the fundamentals of contemporary ultra-small, ultra-fast semiconductor devices. - Topics covered include - Reduced dimensionality and quantum wells - Carrier-phonon interactions and hot phonons - Femtosecond optical studies of hot carrier - Ballistic transport - Submicron and resonant tunneling devices

The first edition of "Semiconductor Physics" was published in 1973 by Springer-Verlag Wien-New York as a paperback in the Springer Study Edition. In 1977, a Russian translation by Professor Yu. K. Pozhela and coworkers at Vilnius/USSR was published by Izdatelstvo "MIR", Mo scow. Since then new ideas have been developed in the field of semi conductors such as electron hole droplets, dangling bond saturation in amorphous silicon by hydrogen, or the determination of the fine struc ture constant from surface quantization in inversion layers. New tech niques such as molecular beam epitaxy which has made the realization of the Esaki superlattice possible, deep level transient spectroscopy, and refined a. c. Hall techniques have evolved. Now that the Viennese edition is about to go out of print, Springer-Verlag, Berlin-Heidelberg-New York is giving me the opportunity to include these new subjects in a monograph to appear in the Solid-State Sciences series. Again it has been the intention to cover the field of semiconductor physics comprehensively, although some chapters such as diffusion of hot carriers and their galvanomagnetic phenomena, as well as super conducting degenerate semiconductors and the appendices, had to go for commercial reasons. The emphasis is more on physics than on device as pects.