Numerous efforts are directed at investigating the use of optics at short distances--for example, at the chip-to-chip and board-to-board levels of the interconnection hierarchy. This book provides an overview of the state of the art in heterogeneous integration of electronics, optoelectronics, and micro-optics for short-distance optical interconnections.

Heterogeneous integration uses packaging technology to integrate dissimilar chips, LED, MEMS, VCSEL, etc. from different fabless houses and with different functions and wafer sizes into a single system or subsystem. How are these dissimilar chips and optical components supposed to talk to each other? The answer is redistribution layers (RDLs). This book addresses the fabrication of RDLs for heterogeneous integrations, and especially focuses on RDLs on: A) organic substrates, B) silicon substrates (through-silicon via (TSV)-interposers), C) silicon substrates (bridges), D) fan-out substrates, and E) ASIC, memory, LED, MEMS, and VCSEL systems. The book offers a valuable asset for researchers, engineers, and graduate students in the fields of semiconductor packaging, materials sciences, mechanical engineering, electronic engineering, telecommunications, networking, etc.

Reflecting rapid growth in research and development on organic/polymeric electronic and photonic materials and devices, Introduction to Organic Electronic and Optoelectronic Materials and Devices provides comprehensive coverage of the state-of-the-art in an accessible format. The book presents fundamentals, principles, and mechanisms complem

Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. - Provides a comprehensive overview of mid-infrared photodetectors and light sources and the latest materials and devices - Reviews emerging areas of research in the field of mid-infrared optoelectronics, including new materials, such as wide bandgap materials, chalcogenides and new approaches, like heterogeneous integration - Includes information on the most relevant applications in industry, like gas sensing, spectroscopy and imaging

Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference devices, such as wavelength filters, are significantly limited by fabrication errors in microfabrication processes. For further performance improvement, therefore, various assisting materials, such as indium-phosphide, silicon-nitride, germanium-tin, are now being imported into silicon photonics by using various heterogeneous integration technologies, such as low-temperature film deposition and wafer/die bonding. These assisting materials and heterogeneous integration technologies would also expand the application field of silicon photonics technology. Fortunately, silicon photonics technology has superior flexibility and robustness for heterogeneous integration. Moreover, along with photonic functions, silicon photonics technology has an ability of integration of electronic functions. In other words, we are on the verge of obtaining an ultimate technology that can integrate all photonic and electronic functions on a single Si chip. This e-Book aims at covering recent developments of the silicon photonic platform and novel functionalities with heterogeneous material integrations on this platform.

Wafer-scale integration has long been the dream of system designers. Instead of chopping a wafer into a few hundred or a few thousand chips, one would just connect the circuits on the entire wafer. What an enormous capability wafer-scale integration would offer: all those millions of circuits connected by high-speed on-chip wires. Unfortunately, the best known optical systems can provide suitably ?ne resolution only over an area much smaller than a whole wafer. There is no known way to pattern a whole wafer with transistors and wires small enough for modern circuits. Statistical defects present a ?rmer barrier to wafer-scale integration. Flaws appear regularly in integrated circuits; the larger the circuit area, the more probable there is a ?aw. If such ?aws were the result only of dust one might reduce their numbers, but ?aws are also the inevitable result of small scale. Each feature on a modern integrated circuit is carved out by only a small number of photons in the lithographic process. Each transistor gets its electrical properties from only a small number of impurity atoms in its tiny area. Inevitably, the quantized nature of light and the atomic nature of matter produce statistical variations in both the number of photons de?ning each tiny shape and the number of atoms providing the electrical behavior of tiny transistors. No known way exists to eliminate such statistical variation, nor may any be possible.