Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering and materials science, Handbook of Zinc Oxide and Related Materials provides a comprehensive, up-to-date review of various technological aspects of ZnO. Volume Two focuses on devices and nanostructures created from ZnO and similar materials. The book covers various nanostructures, synthesis/creation strategies, device behavior, and state-of-the-art applications in electronics and optoelectronics. It also provides useful information on the device and nanoscale process and examines the fabrication of LEDs, LDs, photodetectors, and nanodevices. Covering key properties and important technologies of ZnO-based devices and nanoengineering, the handbook highlights the potential of this wide gap semiconductor. It also illustrates the remaining challenging issues in nanomaterial preparation and device fabrication for R&D in the twenty-first century.

Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a

Transparent conducting materials are key elements in a wide variety of current technologies including flat panel displays, photovoltaics, organic, low-e windows and electrochromics. The needs for new and improved materials is pressing, because the existing materials do not have the performance levels to meet the ever- increasing demand, and because some of the current materials used may not be viable in the future. In addition, the field of transparent conductors has gone through dramatic changes in the last 5-7 years with new materials being identified, new applications and new people in the field. “Handbook of Transparent Conductors” presents transparent conductors in a historical perspective, provides current applications as well as insights into the future of the devices. It is a comprehensive reference, and represents the most current resource on the subject.

Now in its second edition, this updated, combined volume provides a survey of GaInAsP-InP and GaInAsP-GaAs related materials for electronic and photonic device applications. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization techniques for MOCVD growth. Next, the book examines the specifics of the growth of GaAs and the growth and characterization of the GaAs-GaInP system. It describes optical devices based on GaAs and related compounds and details the specifics of GaAs-based laser diode structures. It also discusses electronic devices and provides an overview of optoelectronic integrated circuits (OEICs). It then reviews InP-InP and GaInAs(P)-InP MO

GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.

Zinc oxide (ZnO) in its nanostructured form is emerging as a promising material with great potential for the development of many smart electronic devices. This book presents up-to-date information about various synthesis methods to obtain device-quality ZnO nanostructures. It describes both high-temperature (over 100 C) and low-temperature (under