This issue of ECS Transactions covers emerging electronic materials and concepts, including but not limited to, beyond CMOS integration schemes/technology development and on the impact of nontraditional materials such as optical, laser, RF, and other non-conventional devices in nanoelectronics. Topics include grapheme material properties, preparation, synthesis, and growth; Ge and SiGe devices for PMOS mobility enhancement for next generation CMOS and other devices beyond strain engineering, III-V heterostructures on Si substrates.

This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.

This issue of ECS Transactions addresses the fundamental material science, characterization, modeling and applications of Graphene, Ge-III-V and Emerging materials designed for alternatives technologies to replace CMOS.

The objectives of this symposium was to address all current and future issues related to ¿Emerging Materials For Post-CMOS Applications.¿ The symposium focused on fundamental material science, characterization and applications of emerging materials designed for alternatives technologies to replace CMOS. Special emphasis was placed on ¿Beyond CMOS¿ integration schemes, technology development and on the impact of non-traditional materials into nanoelectronics.