The increase of consumer, medical and sensors electronics using radio frequency (RF) and microwave (MW) circuits has implications on overall performances if design is not robust and optimized for a given applications. The current and later generation communication systems and Internet of Thing (IoT) demand for robust electronic circuits with optimized performance and functionality, but low cost, size, and power consumption. As a result, there is a need for a textbook that provides a comprehensive treatment of the subject. This book provides state-of-the-art coverage of RF and Microwave Techniques and Technologies, covers important topics: transmission-line theory, passive and semiconductor devices, active and passive microwave circuits and receiver systems, as well as antennas, noise and digital signal modulation schemes. With an emphasis on theory, design, and applications, this book is targeted to students, teachers, scientists, and practicing design engineers who are interested in broadening their knowledge of RF and microwave electronic circuit design. Readers will also benefit from a unique integration of theory and practice, provides the readers a solid understanding of the RF and microwave concepts, active and passive components, antenna, and modulation schemes. Readers will learn to solve common design problems ranging from selection of components, matching networks to biasing and stability, and digital modulation techniques. More importantly, it provides basic understanding in the analysis and design of RF and microwave circuits in a manner that is practiced in industry. This make sure that the know-how learned in this book can be effortlessly and straightway put into practice without any obstacles.

A GUIDE TO NOISE IN MICROWAVE CIRCUITS A fulsome exploration of critical considerations in microwave circuit noise In A Guide to Noise in Microwave Circuits: Devices, Circuits, and Measurement, a team of distinguished researchers deliver a comprehensive introduction to noise in microwave circuits, with a strong focus on noise characterization of devices and circuits. The book describes fluctuations beginning with their physical origin and touches on the general description of noise in linear and non-linear circuits. Several chapters are devoted to the description of noise measurement techniques and the interpretation of measured data. A full chapter is dedicated to noise sources as well, including thermal, shot, plasma, and current. A Guide to Noise in Microwave Circuits offers examples of measurement problems—like low noise block (LNB) of satellite television – and explores equipment and measurement methods, like the Y, cold source, and 7-state method. This book also includes: A thorough introduction to foundational terms in microwave circuit noise, including average values, amplitude distribution, autocorrelation, cross-correlation, and noise spectra Comprehensive explorations of common noise sources, including thermal noise, the Nyquist formula and thermal radiation, shot noise, plasma noise, and more Practical discussions of noise and linear networks, including narrowband noise In-depth examinations of calculation methods for noise quantities, including noise voltages, currents, and spectra, the noise correlation matrix, and the noise of simple passive networks Perfect for graduate students specializing in microwave and wireless electronics, A Guide to Noise in Microwave Circuits: Devices, Circuits, and Measurement will also earn a place in the libraries of professional engineers working in microwave or wireless circuits and system design.

As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental physics to modelling and technology, from materials to devices and circuits are reviewed. Containing contributions from European researchers of international repute this volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in III-V microelectronics.

The conference ESSDERC '89 held in September 1989 in Berlin was concerned with the physics, electrical characteristics, reliability and processing of solid state devices and electronic materials. The proceedings contain all invited and contributed papers of the conference and thus becomes a state-of-the-art-report of solid state device research in Europe 1989.

Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.