Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.

The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.

The Fourth International Conference on the Structure of Surfaces provides a forum for the report of new results and less the review of the status of surface structure and the relationship between surface and interface structure and physical or chemical properties of interest. Also within the scope of the meeting are novel experimental and theoretical approaches for the determination of surface and interface structures, computer simulation of dynamic processes and new developments in instrumentation.

An aid for reseaching non-western cultures, the Bibliographic Guide to East Asian Studies covers Japan, China, North and South Korea, Honk Kong, and Taiwan, with approximately 3,500 listings from LC MARC tapes and the Oriental Division of The New York Public Library. It includes publications about East Asia; materials published in any of the relevant countries; and publications in the Chinese, Japanese and Korean languages. Listings are transcribed into Anglicised characters. Each entry provides complete bibliographic information, along with the NYPL and/or LC call numbers.

This book presents some of the latest achievements in nanotechnology and nanomaterials from leading researchers in Ukraine, Europe, and beyond. It features selected peer-reviewed contributions from participants in the 4th International Science and Practice Conference Nanotechnology and Nanomaterials (NANO2016) held in Lviv, Ukraine on August 24-27, 2016. The International Conference was organized jointly by the Institute of Physics of the National Academy of Sciences of Ukraine, Ivan Franko National University of Lviv (Ukraine), University of Tartu (Estonia), University of Turin (Italy), and Pierre and Marie Curie University (France). Internationally recognized experts from a wide range of universities and research institutions share their knowledge and key results on topics ranging from nanooptics, nanoplasmonics, and interface studies to energy storage and biomedical applications.

Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.