Festkörperprobleme XI: Advances in Solid State Physics reviews advances in solid state physics and covers topics ranging from localized vibrational modes in semiconductors to isoelectric impurities in semiconductors, deep impurities, and liquid crystals. Elastic and inelastic electron tunneling through potential barriers in solids is also discussed, along with plasma physics and astrophysics. This book is comprised of 14 chapters and begins with a review of the theoretical and experimental requirements for the observation of high frequency, localized vibrational modes of impurities in a crystal lattice. The reader is then introduced to the properties of deep impurity levels in semiconductors. Some typical examples of isoelectronic impurities are presented, and theories of isoelectronic traps are considered. Subsequent chapters focus on the properties of the various types of liquid crystalline phases (nematic, cholesteric, and smectic); a few astrophysical problems for which the properties of the astrophysical plasma are important; and the use of stochastic models to probe the kinetics of phase transitions. Experimental results for elastic and inelastic electron tunneling through potential barriers in solids are also presented. This monograph will be of interest to physicists.

Festkörper Probleme VIII reviews the status of radiation damage in semiconducting materials and components. This book examines the problems connected to the mechanism of production of defects by bombardment with energetic particles, particularly the displacement energy. Comprised of nine chapters, this book begins with an overview of the microstructure of radiation defects in silicon, which is known from optical absorption experiments and electron spin resonance. This text then explains the preparation of single crystals of high purity or defined impurity contents, which is the basis of successful solid state research. Other chapters consider the widespread application of vapor phase reactions. This book discusses as well mechanism of latent image formation, which considers some advances in silver halide research. The final chapter explains the useful information that can be obtained by a study of the field effects. This book is a valuable resource for solid state physicists as well as applied physicists.

Festkorper Probleme VII covers papers of the European Meeting of the IEEE about Semiconductor Device Research. The book includes papers about the advances in band structures investigations using optical techniques; some problems in the physics of power rectifiers and thyristors; the surface properties of thermally oxidized silicon; and the amplification of acoustic waves at microwave frequencies. The text also presents papers about active thin film devices, optoelectronic devices, and negative conductance in semiconductors. Electrical engineers will find the book invaluable.

Festkörper Probleme IX: Advances in Solid State Physics presents a model for the behavior of electrons in non-crystalline materials. This book describes some experimental evidence that supports for the behavior of electrons. Organized into 16 chapters, this book begins with an overview of crystallization, glass forming, and melting processes in systems forming chalcogenide glasses. This text then describes the theory of the transport properties of electrons in non-crystalline solids and liquids. Other chapters consider the optical and electrical properties of amorphous semiconductors wherein the treatment is mainly restricted to the elements selenium, germanium, and tellurium. This book discusses as well the basic aspects of the optical phenomena of the Jahn–Teller effect, with emphasis on some criteria of the strength and observability of the Jahn–Teller effect. The final chapter deals with the methods for processing emulsion and metal film masks. This book is a valuable resource for solid state physicists.

Festkorper Probleme XIII: Advances in Solid State Physics is a collection of papers from plenary lectures of the solid states division of the German Physical Society in Munster, on March 19-24, 1973. This collection deals with semiconductor physics, surface phenomena, and surface physics. One paper reviews the findings on experiments on the magnetic, optical, electrical, and structural properties of layer type crystals, particularly metal dichalcogenides. This book then discusses the van der Waals attraction using semi-classical methods to explain the correlation in different atoms. This discussion explains the application of the Schrodinger formalism and the Maxwell equations. One paper also reviews the energy distribution of electrons emitted from solids after ultraviolet radiation or monochromatic X-ray exposure. Another paper reviews the use of clean silicon surfaces associated with electron emitters showing ""negative electron affinity."" A paper then reviews the mechanism of charge-transfer devices, with emphasis on the physics of the transfer processes that happen in surface charge-coupled devices or bulk-charge-couple devices. This compendium will prove useful for materials physicists, scientists, and academicians in the field of advanced physics.

Televisions, telephones, watches, calculators, robots, airplanes and space vehicles all depend on silicon chips. Life as we know it would hardly be possible without semiconductor devices. An understanding of how these devices work requires a detailed knowledge of the physics of semiconductors, including charge transport and the emission and absorption of electromagnetic waves. This book may serve both as a university textbook and as a reference for research and microelectronics engineering. Each section of the book begins with a description of an experiment. The theory is then developed as far as necessary to understand the experimental results. Everyone with high-school mathematics should be able to follow the calculations. The band structure calculations for the diamond and zinc blende types of lattice are supplemented with a personal computer program. Semiconductor physics developed most rapidly in the two decades following the invention of the transistor, and naturally most of the references date from this time. But recent developments such as the Gunn effect, the acoustoelectric effect, superlattices, quantum well structures, and the quantum Hall effect are also discussed. The exercises provided (answers to which are available) will greatly assist the student in consolidating the material presented. From the reviews:"This book is a must for any theoretical and experimental physicist working in the area of semiconductor physics." #Physicalia#1

High Excitation and Short Pulse Phenomena contains the proceeding of the Third Trieste ICTP-IUPAP Semiconductor Symposium on ""High Excitation and Short Pulse Phenomena"", held at the International Center for Theoretical Physics, Trieste, Italy on July, 2-6 1984. This book contains the keynote papers of the symposium and the contributions from the participants. It describes the non-equilibrium electron-hole plasmas in direct and indirect gap semiconductors; transport of plasmas and of hot carriers; and expansion velocities. The book also elucidates the screening effects involved in the exciton-plasma transition; the optical bistability and nonlinearity; and experimental techniques with short pulse spectroscopy. Other topics emphasized are the physical aspects of laser annealing and of melting at the highest excitation levels, as well as the results of high excitation and short pulse physics of quantum wells. The fast relaxation processes, as well as the carrier-carrier and carrier-phonon interactions are also explained. This material will serve as a source of information and reference, and will stimulate ways for further research.