This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Combining both fundamental principles and real-life applications in a single volume, this book discusses the latest research results in ferroelectrics, including many new ferroelectric materials for the latest technologies, such as capacitors, transducers and memories. The first two chapters introduce dielectrics and microscopic materials properties, while the following chapter discusses pyroelectricity and piezoelectricity. The larger part of the text is devoted to ferroelectricity and ferroelectric ceramics, with not only their fundamentals but also applications discussed. The book concludes with a look at the future for laser printed materials and applications. With over 600 references to recent publications on piezoelectric and ferroelectric materials, this is an invaluable reference for physicists, materials scientists and engineers.

This indispensable collection of seminal papers on ferroelectricity provides an overview over almost a hundred years of basic and applied research. Containing historic contributions from renowned authors, this book presents developments in an area of science that is still rapidly growing. Although primarily aimed at scientists and academics involved in research, this will also be of use to students as well as newcomers to the field.

Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the application of ferroelectric devices to innovative systems. In particular, the use of these materials as varying capacitors, gyroscope, acoustics sensors and actuators, microgenerators and memory devices will be exposed, providing an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric devices.

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.

Research on ferroelectricity and ferroelectric materials started in 1920 with the discovery by Valasek that the variation of spontaneous polarization in Rochelle salt with sign and magnitude of an applied electric field traced a complete and reproducible hysteresis loop. Activity in the field was sporadic until 1935, when Busch and co-workers announced the observation of similar behavior in potassium dihydrogen phosphate and related compounds. Progress thereafter continued at a modest level with the undertaking of some theoretical as well as further experimental studies. In 1944, von Hippel and co-workers discovered ferroelectricity in barium titanate. The technological importance of ceramic barium titanate and other perovskites led to an upsurge of interest, with many new ferroelectrics being identified in the following decade. By 1967, about 2000 papers on various aspects of ferroelectricity had been published. The bulk of this widely dispersed literature was concerned with the experimental measurement of dielectric, crystallographic, thermal, electromechanical, elastic, optical, and magnetic properties. A critical and excellently organized cpmpilation based on these data appeared in 1969 with the publica tion of Landolt-Bornstein, Volume 111/3. This superb tabulation gave instant access to the results in the literature on nearly 450 pure substances and solid solutions of ferroelectric and antiferroelectric materials. Continuing interest in ferroelectrics, spurred by the growing importance of electrooptic crystals, resulted in the publication of almost as many additional papers by the end of 1969 as had been surveyed in Landolt-Bornstein.