When twins Sheridan and Taylor wake up 400 years in the future, they find a changed world: domed cities, no animals, and a language that's so different, it barely sounds like English. And the worst news: They can't go back home. The twenty-fifth-century government transported the girls to their city hoping to find a famous scientist to help perfect a devastating new weapon. The same government has implanted tracking devices in the citizens, limiting and examining everything they do. Taylor and Sheridan have to find a way out of the city before the government discovers their secrets. To complicate matters, the moblike Dakine has interest in getting hold of them too. The only way for the girls to elude their pursuers is to put their trust in Echo, a guy with secrets of his own. The trio must put their faith in the unknown to make a harrowing escape into the wilds beyond the city. Full of adrenaline-injected chases and heartbreaking confessions, Erasing Time explores the strength of the bonds between twins, the risks and rewards of trust, and the hard road to finding the courage to fight for what you believe in.

Addressing a variety of views on hell, the Bible, and the character of God, offers an eloquent response to the recent media storm surrounding questions of eternal destiny.

A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].

This unique collection of knowledge represents a comprehensive treatment of the fundamental and practical consequences of size reduction in silicon crystals. This clearly structured reference introduces readers to the optical, electrical and thermal properties of silicon nanocrystals that arise from their greatly reduced dimensions. It covers their synthesis and characterization from both chemical and physical viewpoints, including ion implantation, colloidal synthesis and vapor deposition methods. A major part of the text is devoted to applications in microelectronics as well as photonics and nanobiotechnology, making this of great interest to the high-tech industry.