Electron Devices Based On Ferroelectric Hafnium Oxide Thin Films
Title | Electron Devices Based On Ferroelectric Hafnium Oxide Thin Films PDF eBook |
Author | Thomas Kämpfe |
Publisher | |
Pages | 0 |
Release | 2022 |
Genre | |
ISBN | 9783959085526 |
Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films
Title | Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films PDF eBook |
Author | Ekaterina Yurchuk |
Publisher | Logos Verlag Berlin GmbH |
Pages | 184 |
Release | 2015-06-30 |
Genre | Science |
ISBN | 3832540032 |
Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.
Ferroelectricity in Doped Hafnium Oxide
Title | Ferroelectricity in Doped Hafnium Oxide PDF eBook |
Author | Uwe Schroeder |
Publisher | Woodhead Publishing |
Pages | 572 |
Release | 2019-03-27 |
Genre | Technology & Engineering |
ISBN | 0081024312 |
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Formation of Ferroelectricity in Hafnium Oxide Based Thin Films
Title | Formation of Ferroelectricity in Hafnium Oxide Based Thin Films PDF eBook |
Author | Tony Schenk |
Publisher | BoD – Books on Demand |
Pages | 194 |
Release | 2017-03-15 |
Genre | Technology & Engineering |
ISBN | 3743127296 |
In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.
Ferroelectric Thin Films
Title | Ferroelectric Thin Films PDF eBook |
Author | Masanori Okuyama |
Publisher | Springer Science & Business Media |
Pages | 272 |
Release | 2005-02-22 |
Genre | Computers |
ISBN | 9783540241638 |
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Principles and Applications of Ferroelectrics and Related Materials
Title | Principles and Applications of Ferroelectrics and Related Materials PDF eBook |
Author | M. E. Lines |
Publisher | Oxford University Press |
Pages | 700 |
Release | 2001-02 |
Genre | Science |
ISBN | 9780198507789 |
This is a standard work on ferroelectrics.
Negative Capacitance in Ferroelectric Materials
Title | Negative Capacitance in Ferroelectric Materials PDF eBook |
Author | Michael Hoffmann |
Publisher | BoD – Books on Demand |
Pages | 172 |
Release | 2020-09-15 |
Genre | Technology & Engineering |
ISBN | 3751999361 |
This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.