Silizium ist ein wichtiger Rohstoff unserer modernen Welt. Mikroelektronik, Sensorik und Photovoltaik sind drei wichtige Anwendungsgebiete, die aus unserem täglichen Leben heute nicht mehr wegzudenken sind. Entscheidend für all diese Anwendungen ist das Verständnis der elektrischen Eigenschaften des Materials, welche durch Defekte und Verunreinigungen beeinflusst werden. Die Übergangsmetalle sind eine wichtige Klasse von Verunreinigungen im Silizium, da sie die elektrischen Eigenschaften stark beeinflussen. Auch ist bekannt, dass Wasserstoff, welcher in vielen Prozessen in Silizium eindringen kann, mit vielen Defekten reagiert. In der vorliegenden Dissertation wird die Wechselwirkung von Wasserstoff mit den Metallen Titan, Kobalt und Nickel mit Hilfe der kapazitiven Messmethoden DLTS und MCTS untersucht. Verschiedene elektrisch aktive Metall-Wasserstoff-Komplexe können nachgewiesen werden. Auch eine Passivierung der Metalle durch Wasserstoff wird beobachtet. Neben den Reaktionen mit den Metallen wird auch eine Wechselwirkung des Wasserstoffs mit im Silizium vorhandenem Kohlenstoff untersucht. Für eine Einordnung der Ergebnisse werden diese mit dem aus der Literatur bekannten Verhalten benachbarter Elemente verglichen.

VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.

Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..