The International Workshop on Power and Timing Modeling, Optimization, and Simulation PATMOS 2002, was the 12th in a series of international workshops 1 previously held in several places in Europe. PATMOS has over the years evolved into a well-established and outstanding series of open European events on power and timing aspects of integrated circuit design. The increased interest, espe- ally in low-power design, has added further momentum to the interest in this workshop. Despite its growth, the workshop can still be considered as a very - cused conference, featuring high-level scienti?c presentations together with open discussions in a free and easy environment. This year, the workshop has been opened to both regular papers and poster presentations. The increasing number of worldwide high-quality submissions is a measure of the global interest of the international scienti?c community in the topics covered by PATMOS. The objective of this workshop is to provide a forum to discuss and inves- gate the emerging problems in the design methodologies and CAD-tools for the new generation of IC technologies. A major emphasis of the technical program is on speed and low-power aspects with particular regard to modeling, char- terization, design, and architectures. The technical program of PATMOS 2002 included nine sessions dedicated to most important and current topics on power and timing modeling, optimization, and simulation. The three invited talks try to give a global overview of the issues in low-power and/or high-performance circuit design.

This book constitutes the refereed proceedings of the 21st International Conference on Integrated Circuit and System Design, PATMOS 2011, held in Madrid, Spain, in September 2011. The 34 revised full papers presented were carefully reviewed and selected from numerous submissions. The paper feature emerging challenges in methodologies and tools for the design of upcoming generations of integrated circuits and systems and focus especially on timing, performance and power consumption as well as architectural aspects with particular emphasis on modeling, design, characterization, analysis and optimization.

As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.

Welcome to the proceedings of PATMOS 2005, the 15th in a series of international workshops.PATMOS2005wasorganizedbyIMECwithtechnicalco-sponsorshipfrom the IEEE Circuits and Systems Society. Over the years, PATMOS has evolved into an important European event, where - searchers from both industry and academia discuss and investigate the emerging ch- lenges in future and contemporary applications, design methodologies, and tools - quired for the developmentof upcominggenerationsof integrated circuits and systems. The technical program of PATMOS 2005 contained state-of-the-art technical contri- tions, three invited talks, a special session on hearing-aid design, and an embedded - torial. The technical program focused on timing, performance and power consumption, as well as architectural aspects with particular emphasis on modeling, design, char- terization, analysis and optimization in the nanometer era. The Technical Program Committee, with the assistance of additional expert revi- ers, selected the 74 papers to be presented at PATMOS. The papers were divided into 11 technical sessions and 3 poster sessions. As is always the case with the PATMOS workshops, the review process was anonymous, full papers were required, and several reviews were carried out per paper. Beyond the presentations of the papers, the PATMOS technical program was - riched by a series of speeches offered by world class experts, on important emerging research issues of industrial relevance. Prof. Jan Rabaey, Berkeley, USA, gave a talk on “Traveling the Wild Frontier of Ulta Low-Power Design”, Dr. Sung Bae Park, S- sung, gave a presentation on “DVL (Deep Low Voltage): Circuits and Devices”, Prof.

Digital Timing Macromodeling for VLSI Design Verification first of all provides an extensive history of the development of simulation techniques. It presents detailed discussion of the various techniques implemented in circuit, timing, fast-timing, switch-level timing, switch-level, and gate-level simulation. It also discusses mixed-mode simulation and interconnection analysis methods. The review in Chapter 2 gives an understanding of the advantages and disadvantages of the many techniques applied in modern digital macromodels. The book also presents a wide variety of techniques for performing nonlinear macromodeling of digital MOS subcircuits which address a large number of shortcomings in existing digital MOS macromodels. Specifically, the techniques address the device model detail, transistor coupling capacitance, effective channel length modulation, series transistor reduction, effective transconductance, input terminal dependence, gate parasitic capacitance, the body effect, the impact of parasitic RC-interconnects, and the effect of transmission gates. The techniques address major sources of errors in existing macromodeling techniques, which must be addressed if macromodeling is to be accepted in commercial CAD tools by chip designers. The techniques presented in Chapters 4-6 can be implemented in other macromodels, and are demonstrated using the macromodel presented in Chapter 3. The new techniques are validated over an extremely wide range of operating conditions: much wider than has been presented for previous macromodels, thus demonstrating the wide range of applicability of these techniques.

This book constitutes the refereed proceedings of the 20th International Conference on Integrated Circuit and System Design, PATMOS 2010, held in Grenoble, France, in September 2010. The 24 revised full papers presented and the 9 extended abstracts were carefully reviewed and are organized in topical sections on design flows; circuit techniques; low power circuits; self-timed circuits; process variation; high-level modeling of poweraware heterogeneous designs in SystemC-AMS; and minalogic.

This useful book addresses electrothermal problems in modern VLSI systems. It discusses electrothermal phenomena and the fundamental building blocks that electrothermal simulation requires. The authors present three important applications of VLSI electrothermal analysis: temperature-dependent electromigration diagnosis, cell-level thermal placement, and temperature-driven power and timing analysis.