The magnetic behaviour in nanoscale structures is of great interest for the fundamental understanding of magnetisation processes and also has importance for wide ranging technological applications. This thesis examines mechanisms for the enhanced control of domain walls in these structures via focussed ion beam modifications to magnetic nanowires and through the inclusion of periodic geometrical modifications to the nanowires geometry. A detailed investigation into the effect of focussed ion beam irradiation on the structure of NiFe/Au bilayers was performed through x-ray reflectivity and fluorescence techniques. This analysis revealed the development of interfacial intermixing with low dose irradiation. This is associated with complex changes of the magnetic behaviour including a rapid decrease, followed by a recovery of the saturation magnetisation with low dose irradiation. This behaviour is attributed to changes in the local environment of the atoms at the interface; resulting in modifications to the magnetic moment on Ni and Fe. The development of an induced moment on Au and a change in the spin-orbit interaction is also suggested. Localised control of the magnetic properties in nanowires demonstrates the ability to manipulate domain walls in these structures. Here, irradiated regions provide pinning sites where the width and dose of the irradiated region give control over the pinning potential. The inclusion edge modulation to nanowires geometry provides additional control over their magnetic behaviour. The direct magnetisation reversal field of these structures is explained by an analytical model based on the torque on the spins following the modulated wire geometry. This model is scalable for different modulation parameters and combines with the effect of localised regions of orthogonal anisotropy along the wire; explaining the reversal behaviour over the entire parameter space. Domain wall mediated reversal in modulated wires was also investigated in these structures. The inclusion of modulation shows an improvement in dynamic properties by the suppression of Walker breakdown. This is due to the relationship between geometrical modulations and the periodicity of micromagnetic domain wall structural changes during the Walker breakdown process. The combination of this work shows a route to the optimisation of the dynamic properties whilst minimising the detrimental increase in the de-pinning field from the modulation.

Magnetic transmission X-ray microscopy (M-TXM) is used to image domain walls in magnetic ring structures formed by a 300 nm wide, 24 nm thick Ni1Fe19 nanowire. Both transverse and vortex type domain walls are observed after application of different field sequences. Domain walls can be observed by comparing images obtained from opposite field sequences, or else domain wall propagation observed by comparing successive images in a particular field sequence. This demonstrates the potential use of M-TXM in developing and understanding planar magnetic nanowire behavior.

The aim of the book is to provide the reader with a comprehensive overview of the current research in the interesting field of magnetism and magnetic materials. Some very interesting topics like erasing and retrieving the particular magnetic domain of a ferromagnetic thin film, the single domain behaviour of magnetic nanowire with dimension less than 100 nm, magneto-transport behaviour of Heusler alloys etc. have been covered.

Over two volumes and 1500 pages, the Handbook of Spintronics will cover all aspects of spintronics science and technology, including fundamental physics, materials properties and processing, established and emerging device technology and applications. Comprising 60 chapters from a large international team of leading researchers across academia and industry, the Handbook provides readers with an up-to-date and comprehensive review of this dynamic field of research. The opening chapters focus on the fundamental physical principles of spintronics in metals and semiconductors, including an introduction to spin quantum computing. Materials systems are then considered, with sections on metallic thin films and multilayers, magnetic tunnelling structures, hybrids, magnetic semiconductors and molecular spintronic materials. A separate section reviews the various characterisation methods appropriate to spintronics materials, including STM, spin-polarised photoemission, x-ray diffraction techniques and spin-polarised SEM. The third part of the Handbook contains chapters on the state of the art in device technology and applications, including spin valves, GMR and MTJ devices, MRAM technology, spin transistors and spin logic devices, spin torque devices, spin pumping and spin dynamics and other topics such as spin caloritronics. Each chapter considers the challenges faced by researchers in that area and contains some indications of the direction that future work in the field is likely to take. This reference work will be an essential and long-standing resource for the spintronics community.