Emerging technologies provide potential solutions to overcome the limitations of modern CMOS technologies. Specifically, as power density limitations impede further CMOS scaling, emerging technologies including spintronics, memristors, ambipolar transistors, and other beyond-CMOS devices are promising replacements for conventional CMOS transistors due to features such as non-volatility, low energy consumption, high operation speed, or high logical expressiveness. However, the inadequacies of current modeling techniques inhibit the design of large-scale systems that exploit these novel devices. This dissertation describes a variety of proposals for beyond-CMOS computing systems using emerging technologies. Spintronic technologies such as domain wall-magnetic tunnel junctions (DW-MTJs) and magnetic skyrmions are particularly exciting for highly-efficient non-volatile information processing. Additionally, unconventional electronic switching devices including ambipolar transistors and memristors are also investigated as replacements to CMOS and for hybrid emerging technology-CMOS computing systems. These beyond-CMOS devices and circuits exhibit the versatility and scalability of emerging technologies. By exploiting low energy switching, reconfigurability, non-volatility and unique operating mechanisms, these emerging technologies provide the potential to revolutionize information processing for the next generation of computing system.

Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 &, and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.

Quality Electronic Design (QED)’s landscape spans a vast region where territories of many participating disciplines and technologies overlap. This book explores the latest trends in several key topics related to quality electronic design, with emphasis on Hardware Security, Cybersecurity, Machine Learning, and application of Artificial Intelligence (AI). The book includes topics in nonvolatile memories (NVM), Internet of Things (IoT), FPGA, and Neural Networks.

This book presents collaborative research presented by experts in the field of nonlinear science provides the reader with contemporary, cutting-edge, research works that bridge the gap between theory and device realizations of nonlinear phenomena. The conference provides a unique forum for applications of nonlinear systems while solving practical problems in science and engineering. Topics include: chaos gates, social networks, communication, sensors, lasers, molecular motors, biomedical anomalies, and stochastic resonance. This book provides a comprehensive report of the various research projects presented at the International Conference on Applications in Nonlinear Dynamics (ICAND 2018) held in Maui, Hawaii, 2018. It can be a valuable tool for scientists and engineering interested in connecting ideas and methods in nonlinear dynamics with actual design, fabrication and implementation of engineering applications or devices.

Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.

The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field. The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for,handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.