Defects in Two-Dimensional Materials addresses the fundamental physics and chemistry of defects in 2D materials and their effects on physical, electrical and optical properties. The book explores 2D materials such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMD). This knowledge will enable scientists and engineers to tune 2D materials properties to meet specific application requirements. The book reviews the techniques to characterize 2D material defects and compares the defects present in the various 2D materials (e.g. graphene, h-BN, TMDs, phosphorene, silicene, etc.). As two-dimensional materials research and development is a fast-growing field that could lead to many industrial applications, the primary objective of this book is to review, discuss and present opportunities in controlling defects in these materials to improve device performance in general or use the defects in a controlled way for novel applications. Presents the theory, physics and chemistry of 2D materials Catalogues defects of 2D materials and their impacts on materials properties and performance Reviews methods to characterize, control and engineer defects in 2D materials

Learn about the most recent advances in 2D materials with this comprehensive and accessible text. Providing all the necessary materials science and physics background, leading experts discuss the fundamental properties of a wide range of 2D materials, and their potential applications in electronic, optoelectronic and photonic devices. Several important classes of materials are covered, from more established ones such as graphene, hexagonal boron nitride, and transition metal dichalcogenides, to new and emerging materials such as black phosphorus, silicene, and germanene. Readers will gain an in-depth understanding of the electronic structure and optical, thermal, mechanical, vibrational, spin and plasmonic properties of each material, as well as the different techniques that can be used for their synthesis. Presenting a unified perspective on 2D materials, this is an excellent resource for graduate students, researchers and practitioners working in nanotechnology, nanoelectronics, nanophotonics, condensed matter physics, and chemistry.

Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory. While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap. - Presents an in-depth overview of both conventional bulk semiconductors and low-dimensional, novel material systems, such as 1D structures and 2D monolayers - Addresses a range of defects in a variety of systems, providing a comparative approach - Includes sections on advances in theory that provide insights on where this body of research might lead

Synthesis, Modelling and Characterization of 2D Materials and Their Heterostructures provides a detailed discussion on the multiscale computational approach surrounding atomic, molecular and atomic-informed continuum models. In addition to a detailed theoretical description, this book provides example problems, sample code/script, and a discussion on how theoretical analysis provides insight into optimal experimental design. Furthermore, the book addresses the growth mechanism of these 2D materials, the formation of defects, and different lattice mismatch and interlayer interactions. Sections cover direct band gap, Raman scattering, extraordinary strong light matter interaction, layer dependent photoluminescence, and other physical properties. - Explains multiscale computational techniques, from atomic to continuum scale, covering different time and length scales - Provides fundamental theoretical insights, example problems, sample code and exercise problems - Outlines major characterization and synthesis methods for different types of 2D materials

Elements of Structures and Defects of Crystalline Materials has been written to cover not only the fundamental principles behind structures and defects, but also to provide deep insights into understanding the relationships of properties, defect chemistry and processing of the concerned materials. Part One deals with structures, while Part Two covers defects. Since the knowledge of the electron configuration of elements is necessary for understanding the nature of chemical bonding, it is discussed in the opening chapter. Chapter Two then describes the bonding formation within the crystal structures of varied materials, with Chapter Three delving into how a material's structure is formed. In view of the importance of the effects of the structure distortion on the material properties due to the fields, the related topics have been included in section 3.4. Moreover, several materials still under intensive investigation have been illustrated to provide deep insights into understanding the effects of the relationships of processing, structures and defects on the material properties. The defects of materials are explored in Part II. Chapter 4 deals with the point defects of metal and ceramics. Chapter 5 covers the fundamentals of the characteristics of dislocations, wherein physics and the atomic mechanics of several issues have been described in detail. In view of the significant influence of the morphologies including size, shape and distribution of grains, phases on the microstructure evolution, and, in turn, the properties of materials, the final chapter focuses on the fundamentals of interface energies, including single phase (grain) boundary and interphase boundary. - Discusses the relationship between properties, defect chemistry and the processing of materials - Presents coverage of the fundamental principles behind structures and defects - Includes information on two-dimensional and three-dimensional imperfections in solids

This book ''Recent Advances in Graphene Research'' provides a state-of-the-art report of the knowledge accumulated in graphene research. It contains 12 chapters divided into three sections. Section 1 ''Fundamentals of Graphene'' deals with quantum hall effect in graphene, electronic properties of carbon nanostructures and spectral statistics of graphene nanoflakes. In Section 2 ''Graphene Synthesis,'' the optimized synthesis procedures of graphene and its derivatives are presented. The application of graphene and its nanostructured-based materials for energy storage, conservation and other extensive applications are described in Section 3 ''Application of Graphene and its Nanostructures''. We believe that this book offers broader prospective to the readers in the recent advances in graphene research, starting from fundamental science to application.

Spintronic 2D Materials: Fundamentals and Applications provides an overview of the fundamental theory of 2D electronic systems that includes a selection of the most intensively investigated 2D materials. The book tells the story of 2D spintronics in a systematic and comprehensive way, providing the growing community of spintronics researchers with a key reference. Part One addresses the fundamental theoretical aspects of 2D materials and spin transport, while Parts Two through Four explore 2D material systems, including graphene, topological insulators, and transition metal dichalcogenides. Each section discusses properties, key issues and recent developments. In addition, the material growth method (from lab to mass production), device fabrication and characterization techniques are included throughout the book.