Containing Papers Presented at the European Materials Research Society 1997 Spring Meeting, Symposium L: III-V Nitrides Semiconductors and Ceramics: from Materials Growth to Device Applications, June 16-20, 1997, Strasbourg, France
Title | Containing Papers Presented at the European Materials Research Society 1997 Spring Meeting, Symposium L: III-V Nitrides Semiconductors and Ceramics: from Materials Growth to Device Applications, June 16-20, 1997, Strasbourg, France PDF eBook |
Author | |
Publisher | |
Pages | 328 |
Release | 1997 |
Genre | |
ISBN |
Containing Papers Presented at the European Materials Research Society 1997 Spring Meeting, Symposium L: III-V Nitrides Semiconductors and Ceramics: from Material Growth to Device Applications
Title | Containing Papers Presented at the European Materials Research Society 1997 Spring Meeting, Symposium L: III-V Nitrides Semiconductors and Ceramics: from Material Growth to Device Applications PDF eBook |
Author | |
Publisher | |
Pages | 329 |
Release | 1997 |
Genre | |
ISBN |
Papers Presented at the European Materials Research Society 1997 Spring Meeting, Symposium L
Title | Papers Presented at the European Materials Research Society 1997 Spring Meeting, Symposium L PDF eBook |
Author | |
Publisher | |
Pages | 0 |
Release | 1997 |
Genre | |
ISBN |
III-V Nitrides Semiconductors and Ceramics
Title | III-V Nitrides Semiconductors and Ceramics PDF eBook |
Author | B. K. Meyer |
Publisher | Elsevier Science Limited |
Pages | 329 |
Release | 1998-07 |
Genre | Science |
ISBN | 9780444205186 |
Gallium Nitride and its alloys with InN and AlN, have recently emerged as important semiconductor materials with application to yellow, green, blue and ultraviolet portions of the spectrum as emitters, detectors and high temperature electronics. LEDs based on wide badgap GaN nitrides exhibit excellent longevity and brightness levels. Combined with red LEDs one can, for the first time, have full colour semiconductor displays. The 4 day symposium was presented at the combined 1997 International Conference on Applied Materials/European Materials Research Society Spring meeting (ICAM'97/E-MRS'97) held in Strasbourg (France) from 16-20 June 1997, provided a forum for active nitride researchers covering the most recent developments in all areas of nitride semiconductors. Sessions focused on the aspects of epitaxial and bulk growth of GaN and its alloys, on optical properties and structural and electrical characterisation, quantum phenomena and light-emitting devices such as LEDs and laser diodes.
Index of Conference Proceedings
Title | Index of Conference Proceedings PDF eBook |
Author | British Library. Document Supply Centre |
Publisher | |
Pages | 844 |
Release | 1999 |
Genre | Conference proceedings |
ISBN |
Dilute III-V Nitride Semiconductors and Material Systems
Title | Dilute III-V Nitride Semiconductors and Material Systems PDF eBook |
Author | Ayse Erol |
Publisher | Springer Science & Business Media |
Pages | 607 |
Release | 2008-01-12 |
Genre | Technology & Engineering |
ISBN | 3540745297 |
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Nitride Semiconductors: Volume 482
Title | Nitride Semiconductors: Volume 482 PDF eBook |
Author | Materials Research Society. Meeting |
Publisher | |
Pages | 1274 |
Release | 1998-04-20 |
Genre | Technology & Engineering |
ISBN |
This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.