This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.

A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport and stochastic phenomena in nanoscale physics. The approach described is to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage-current and thermal dependences. Our current knowledge of measurement methods for mesoscopic devices is summarized to identify directions for future research, related to downscaling effects. The directions for future research into fluctuation phenomena in quantum dot and quantum wire devices are specified. Nanoscale electronic devices will be the basic components for electronics of the 21st century. From this point of view the signal-to-noise ratio is a very important parameter for the device application. Since the noise is also a quality and reliability indicator, experimental methods will have a wide application in the future.

Advances in design methods and process technologies have resulted in a continuous increase in the complexity of integrated circuits (ICs). However, the increased complexity and nanometer-size features of modern ICs make them susceptible to manufacturing defects, as well as performance and quality issues. Testing for Small-Delay Defects in Nanoscale CMOS Integrated Circuits covers common problems in areas such as process variations, power supply noise, crosstalk, resistive opens/bridges, and design-for-manufacturing (DfM)-related rule violations. The book also addresses testing for small-delay defects (SDDs), which can cause immediate timing failures on both critical and non-critical paths in the circuit. Overviews semiconductor industry test challenges and the need for SDD testing, including basic concepts and introductory material Describes algorithmic solutions incorporated in commercial tools from Mentor Graphics Reviews SDD testing based on "alternative methods" that explores new metrics, top-off ATPG, and circuit topology-based solutions Highlights the advantages and disadvantages of a diverse set of metrics, and identifies scope for improvement Written from the triple viewpoint of university researchers, EDA tool developers, and chip designers and tool users, this book is the first of its kind to address all aspects of SDD testing from such a diverse perspective. The book is designed as a one-stop reference for current industrial practices, research challenges in the domain of SDD testing, and recent developments in SDD solutions.

This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.