Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

Structurally disordered refractory ternary films such as titanium silicon nitride (Ti-Si-N) have potential as advanced diffusion barriers in future ULSI metallization schemes. The authors demonstrate chemical vapor deposition (CVD) of Ti-Si-N-containing films in a commercially available single-wafer CVD system using two different Ti precursors, TiCl4 and tetrakis(diethylamino)titanium (TDEAT). In particular, the TDEAT-based films can be grown conformally with low impurity content, and are promising candidates for advanced diffusion barrier applications.

Structurally disordered refractory ternary films such as titanium silicon nitride (Ti-Si-N) have potential as advanced diffusion barriers in future ULSI metallization schemes. Here the authors present results on purely thermal metalorganic chemical vapor deposition (CVD) of Ti-Si-N. At temperatures between 300 and 450 C, tetrakis(diethylamido)titanium (TDEAT), silane, and ammonia react to grow Ti-Si-N films with Si contents of 0--20 at.%. Typical impurity contents are 5--10 at.%H and 0.5 to 1.5 at.% C, with no O or other impurities detected in the bulk of the film. Although the film resistivity increases with increasing Si content, it remains below 1,000[micro][Omega]-cm for films with less than 5 at.% Si. These films are promising candidates for advanced diffusion barriers.

Solid state chemistry is a multidisciplinary field that deals with the synthesis, structural characterization and properties of various solids, and it has been playing a more and more important role in the design and preparation of advanced materials. This book includes the excellent research results recently obtained by a wide spectrum of solid state chemists both from China and from abroad. Among the distinguished contributors are C N R Rao, M Greenblatt and Y T Qian, to name a few. A variety of subjects representing the frontiers of solid state chemistry — which are categorized into solids with electrical, optical and magnetic properties; porous solids and catalysts; hybrid inorganic-organic solids; solid nanomaterials; and new synthetic methods and theory — are presented. This book will benefit readers who are interested in the chemistry and physics of solids, as well as materials scientists and engineers.The proceedings have been selected for coverage in:• Chemistry Citation IndexTM• Index to Scientific & Technical Proceedings (ISTP CDROM version / ISI Proceedings)

Papers originally presented at the symposium on [title] held in Boston, November/December 1989. The contributions are organized into six sections, covering fundamentals/modeling, diagnostics, process- microstructure relationships, microstructure-mechanical property relationships, novel/large-scale technologies, and metal-organic chemical vapor deposition. Acidic paper. Annotation copyrighted by Book News, Inc., Portland, OR

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