This book focuses on angle-resolved photoemission spectroscopy studies on novel interfacial phenomena in three typical two-dimensional material heterostructures: graphene/h-BN, twisted bilayer graphene, and topological insulator/high-temperature superconductors. Since the discovery of graphene, two-dimensional materials have proven to be quite a large “family”. As an alternative to searching for other family members with distinct properties, the combination of two-dimensional (2D) materials to construct heterostructures offers a new platform for achieving new quantum phenomena, exploring new physics, and designing new quantum devices. By stacking different 2D materials together and utilizing interfacial periodical potential and order-parameter coupling, the resulting heterostructure’s electronic properties can be tuned to achieve novel properties distinct from those of its constituent materials. This book offers a valuable reference guide for all researchers and students working in the area of condensed matter physics and materials science.

?Density Waves in Solids is written for graduate students and scientists interested in solid-state sciences. It discusses the theoretical and experimental state of affairs of two novel types of broken symmetry ground states of metals, charge, and spin density waves. These states arise as the consequence of electron-phonon and electron-electron interactions in low-dimensional metals.Some fundamental aspects of the one-dimensional electron gas, and of the materials with anisotropic properties, are discussed first. This is followed by the mean field theory of the phases transitions?discussed using second quantized formalism?together with the various experimental observations on the transition and on the ground states. Fluctuation effects and the collective excitations are reviewed next, using the Ginzburg-Landau formalism, followed by the review of the interaction of these states with the underlying lattice and with impurities. The final chapters are devoted to the response of the ground states to external perturbations.

Revised and expanded second edition of the standard work on new techniques for studying solid surfaces.

Over two volumes and 1500 pages, the Handbook of Spintronics will cover all aspects of spintronics science and technology, including fundamental physics, materials properties and processing, established and emerging device technology and applications. Comprising 60 chapters from a large international team of leading researchers across academia and industry, the Handbook provides readers with an up-to-date and comprehensive review of this dynamic field of research. The opening chapters focus on the fundamental physical principles of spintronics in metals and semiconductors, including an introduction to spin quantum computing. Materials systems are then considered, with sections on metallic thin films and multilayers, magnetic tunnelling structures, hybrids, magnetic semiconductors and molecular spintronic materials. A separate section reviews the various characterisation methods appropriate to spintronics materials, including STM, spin-polarised photoemission, x-ray diffraction techniques and spin-polarised SEM. The third part of the Handbook contains chapters on the state of the art in device technology and applications, including spin valves, GMR and MTJ devices, MRAM technology, spin transistors and spin logic devices, spin torque devices, spin pumping and spin dynamics and other topics such as spin caloritronics. Each chapter considers the challenges faced by researchers in that area and contains some indications of the direction that future work in the field is likely to take. This reference work will be an essential and long-standing resource for the spintronics community.

An up-to-date introduction to the field, treating in depth the electronic structures of atoms, molecules, solids and surfaces, together with brief descriptions of inverse photoemission, spin-polarized photoemission and photoelectron diffraction. Experimental aspects are considered throughout and the results carefully interpreted by theory. A wealth of measured data is presented in tabullar for easy use by experimentalists.

Angle-resolved photoemission has become an indispensable tool for solid state and surface physicists and chemists. This book covers the underlying phenomenology of the technique, reviews its application to existing problems, and discusses future applications. The book is particularly timely given the significant improvements in experimental and theoretical methodology which have recently been or soon will be attained, namely, ultrahigh resolution studies using improved sources of synchrotron radiation, quasiparticle interpretation of measured dispersion relations and spectra, in situ growth of novel materials, etc. The technique has been applied predominantly to understand materials for which the one-electron paradigm is a reasonable approximation. Most chapters discuss this type of experiment: 2D and 3D states in metals and semiconductors, extrinsic states induced by adsorption, etc. Applications of the technique to materials where electron correlation plays a comparable role to that of solid state hybridization, ferro- and antiferromagnets, high Tc superconductors, etc. are rapidly growing in popularity. These areas are also discussed and a foundation is laid for further experiments in this direction. Almost all chapters contain comprehensive bibliographies and compendia of systems studied. The book has an extensive index which cross references applications and systems studied.

This book summarizes the most recent and compelling experimental results for complex oxide interfaces. The results of this book were obtained with the cutting-edge photoemission technique at highest energy resolution. Due to their fascinating properties for new-generation electronic devices and the challenge of investigating buried regions, the book chiefly focuses on complex oxide interfaces. The crucial feature of exploring buried interfaces is the use of soft X-ray angle-resolved photoemission spectroscopy (ARPES) operating on the energy range of a few hundred eV to increase the photoelectron mean free path, enabling the photons to penetrate through the top layers – in contrast to conventional ultraviolet (UV)-ARPES techniques. The results presented here, achieved by different research groups around the world, are summarized in a clearly structured way and discussed in comparison with other photoemission spectroscopy techniques and other oxide materials. They are complemented and supported by the most recent theoretical calculations as well as results of complementary experimental techniques including electron transport and inelastic resonant X-ray scattering.