Annotation The International Semiconductor Laser Conference has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25th International Semiconductor Laser Conference will be held in Kobe Japan from 12-15 September 2016. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics of new materials and structures to new and improved device concepts are covered.

The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.

This work presents progress in the root-cause analysis of power saturation mechanisms in continuous wave (CW) driven GaAs-based high-power broad area diode lasers operated at 935 nm. Target is to increase efficiency at high optical CW powers by epitaxial design. The novel extreme triple asymmetric (ETAS) design was developed and patented within this work to equip diode lasers that use an extremely thin p-waveguide with a high modal gain. An iterative variation of diode lasers employing ETAS designs was used to experimentally clarify the impact of modal gain on the temperature dependence of internal differential quantum efficiency (IDQE) and optical loss. High modal gain leads to increased free carrier absorption from the active region. However, less power saturation is observed, which must then be attributed to an improved temperature sensitivity of the IDQE. The effect of longitudinal spatial hole burning (LSHB) leads to above average non-linear carrier loss at the back facet of the device. At high CW currents the junction temperature rises. Therefore, not only the asymmetry of the carrier profile increases but also the average carrier density in order to compensate for the decreased material gain and increased threshold gain. This carrier non-pinning effect above threshold is found in this work to enhance the impact of LSHB already at low currents, leading to rapid degradation of IDQE with temperature. This finding puts LSHB into a new context for CW-driven devices as it emphasizes the importance of low carrier densities at threshold. The carrier density was effectively reduced by applying the novel ETAS design. This enabled diode lasers to be realized that show minimized degradation of IDQE with temperature and therefore improved performance in CW operation.

Power beaming is the ability to move energy without moving or employing mass between an energy input and energy output. It is an emerging technology that could reshape how we generate and distribute energy and how our devices and autonomous systems are powered.This comprehensive compendium provides the foundation needed for researchers, technology developers, and end users to understand the promise and challenges for power beaming. By establishing a common nomenclature and conceptual approach to the analysis and assessment of power beaming systems, this unique reference text provides a true status of advancements in the field, and lays the groundwork for fruitful future research and applications.

In recent years, investments by cloud companies in mega data centers and associated network infrastructure has created a very active and dynamic segment in the optical components and modules market. Optical interconnect technologies at high speed play a critical role for the growth of mega data centers, which flood the networks with unprecedented amount of data traffic. Datacenter Connectivity Technologies: Principles and Practice provides a comprehensive and in-depth look at the development of various optical connectivity technologies which are making an impact on the building of data centers. The technologies span from short range connectivity, as low as 100 meters with multi-mode fiber (MMF) links inside data centers, to long distances of hundreds of kilometers with single-mode fiber (SMF) links between data centers.This book is the first of its kind to address various advanced technologies connecting data centers. It represents a collection of achievements and the latest developments from well-known industry experts and academic researchers active in this field.

The International Semiconductor Laser Conference has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs The 25th International Semiconductor Laser Conference will be held in Kobe Japan from 12 15 September 2016 The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics of new materials and structures to new and improved device concepts are covered

Intelligent Nanotechnology: Merging Nanoscience and Artificial Intelligence provides an overview of advances in science and technology made possible by the convergence of nanotechnology and artificial intelligence (AI). Sections focus on AI-enhanced design, characterization and manufacturing and the use of AI to improve important material properties, with an emphasis on mechanical, photonic, electronic and magnetic properties. Designing benign nanomaterials through the prediction of their impact on biology and the environment is also discussed. Other sections cover the use of AI in the acquisition and analysis of data in experiments and AI technologies that have been enhanced through nanotechnology platforms. Final sections review advances in applications enabled by the merging of nanotechnology and artificial intelligence, including examples from biomedicine, chemistry and automated research. - Includes recent advances on AI-enhanced design, characterization and the manufacturing of nanomaterials - Reviews AI technologies that have been enabled by nanotechnology - Discusses potentially world-changing applications that could ensue as a result of merging these two fields