2008 IEEE MTT-S International Microwave Symposium Digest, 2008
Title | 2008 IEEE MTT-S International Microwave Symposium Digest, 2008 PDF eBook |
Author | |
Publisher | |
Pages | 1723 |
Release | 2008 |
Genre | Microwave devices |
ISBN |
2008 IEEE MTT-S International Microwave Symposium Digest
Title | 2008 IEEE MTT-S International Microwave Symposium Digest PDF eBook |
Author | Microwave Theory and Techniques Society |
Publisher | |
Pages | 447 |
Release | 2008 |
Genre | |
ISBN |
Microwave Symposium Digest, 2008 IEEE MTT-S International
Title | Microwave Symposium Digest, 2008 IEEE MTT-S International PDF eBook |
Author | |
Publisher | |
Pages | |
Release | 2010 |
Genre | |
ISBN |
2008 IEEE Mtt-s International Microwave Symposium Digest
Title | 2008 IEEE Mtt-s International Microwave Symposium Digest PDF eBook |
Author | M. Golio |
Publisher | IEEE |
Pages | 1723 |
Release | 2009-01-21 |
Genre | Technology & Engineering |
ISBN | 9781424417803 |
2008 IEEE MTT-S International Microwave Symposium
Title | 2008 IEEE MTT-S International Microwave Symposium PDF eBook |
Author | IEEE Staff |
Publisher | |
Pages | |
Release | 2008 |
Genre | |
ISBN | 9781509077854 |
Handbook for III-V High Electron Mobility Transistor Technologies
Title | Handbook for III-V High Electron Mobility Transistor Technologies PDF eBook |
Author | D. Nirmal |
Publisher | CRC Press |
Pages | 446 |
Release | 2019-05-14 |
Genre | Science |
ISBN | 0429862520 |
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
EMBEC & NBC 2017
Title | EMBEC & NBC 2017 PDF eBook |
Author | Hannu Eskola |
Publisher | Springer |
Pages | 1168 |
Release | 2017-06-12 |
Genre | Technology & Engineering |
ISBN | 9811051224 |
This volume presents the proceedings of the joint conference of the European Medical and Biological Engineering Conference (EMBEC) and the Nordic-Baltic Conference on Biomedical Engineering and Medical Physics (NBC), held in Tampere, Finland, in June 2017. The proceedings present all traditional biomedical engineering areas, but also highlight new emerging fields, such as tissue engineering, bioinformatics, biosensing, neurotechnology, additive manufacturing technologies for medicine and biology, and bioimaging, to name a few. Moreover, it emphasizes the role of education, translational research, and commercialization.